# High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

https://mdr.nims.go.jp/datasets/eeb521b0-1e71-4e2c-94ca-2326d729526a

## File

- [shrine20230224-1595-gqy7mo.pdf](https://mdr.nims.go.jp/filesets/5b3837fb-9817-4bb2-a7fe-1d03fe9d08ad/download) ([Detail](https://mdr.nims.go.jp/filesets/5b3837fb-9817-4bb2-a7fe-1d03fe9d08ad.md))

## Id

eeb521b0-1e71-4e2c-94ca-2326d729526a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-02-24T12:03:15.123970Z

## Updated at

2024-01-05T13:13:57.323260Z

## Published at

2023-02-28T02:28:04.547632Z

## Doi



## First published url

https://doi.org/10.1109/JEDS.2019.2915250

## Date published

2019-05-08

## Recorded date published

2019

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
  title_type: original
  lang: en

## Description

- description: In this paper, planar-type and novel triple-gate fin-type hydrogenated
    diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs)
    are fabricated on single-crystalline diamond substrate. Both MOSFETs show good
    operations with on/off ratios as high as 1010. Current output maximum normalized
    by gate width for the triple-gate H-diamond MOSFET is ‒271.3 mA mm‒1, which is
    almost two times higher than that of the planar-type MOSFET. This study is meaningful
    to fabricate high current out and downscaled H-diamond MOSFETs.
  description_type: abstract
  lang: eng

## Creator

- name: LIU, Jiangwei
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
  organization: National Institute for Materials Science
  department: 機能性材料研究拠点
  ror: https://ror.org/026v1ze26
- name: OOSATO, Hirotaka
  role: author
  organization: National Institute for Materials Science
  department: 技術開発・共用部門/微細加工プラットフォーム
  ror: https://ror.org/026v1ze26
- name: DA, Bo
  role: author
  orcid: https://orcid.org/0000-0002-0785-8662
  organization: National Institute for Materials Science
  department: 統合型材料開発・情報基盤部門/材料データプラットフォームセンター/材料データ解析グループ
  ror: https://ror.org/026v1ze26
- name: KOIDE, Yasuo
  role: author
  organization: National Institute for Materials Science
  department: 技術開発・共用部門/ＮＩＭＳ・名大窒化ガリウム評価基盤研究ラボラトリ　－天野・小出共同研究ラボ－
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: IEEE

## Managing organization



## Keyword

- subject: Diamond
  schema: not_defined
- subject: MOSFET
  schema: not_defined
- subject: triple-gate
  schema: not_defined

## Rights

- description: In Copyright
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: IEEE Journal of the Electron Devices Society
  issn: '21686734'
  volume: '7'
  start_page: 561
  end_page: 565

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 5b3837fb-9817-4bb2-a7fe-1d03fe9d08ad
  filename: shrine20230224-1595-gqy7mo.pdf
  content_type: application/pdf
  size: 1028467
  md5: 4d97c1a66eef0f0ffff1131b05f75292

## Thumbnail

fileset_id: 5b3837fb-9817-4bb2-a7fe-1d03fe9d08ad
filename: shrine20230224-1595-gqy7mo.pdf