# Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2 heterobilayers

https://mdr.nims.go.jp/datasets/ee86352d-18bc-4fcc-9164-5e9abb058b64

## File

- [s41467-024-48321-1.pdf](https://mdr.nims.go.jp/filesets/2735ea99-cd51-4e5f-92e3-95e1f90722eb/download) ([Detail](https://mdr.nims.go.jp/filesets/2735ea99-cd51-4e5f-92e3-95e1f90722eb.md))

## Id

ee86352d-18bc-4fcc-9164-5e9abb058b64

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-18T06:46:05.849499Z

## Updated at

2025-02-23T13:48:36.291287Z

## Published at

2025-02-23T13:48:36.380012Z

## Doi



## First published url

https://doi.org/10.1038/s41467-024-48321-1

## Date published

2024-05-14

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Electric-field tunable Type-I to Type-II band alignment transition in MoSe2/WS2
    heterobilayers
  title_type: original
  lang: en

## Description

- description: Semiconductor heterojunctions are ubiquitous components of modern electronics.
    Their properties are determined crucially by the band alignment at the interface,
    which may exhibit straddling gap (type-I), staggered gap (type-II) or broken gap
    (type-III). While it is desirable to manually switch the band alignment type -
    each of which has their distinctive characteristics and applications - within
    a single active material, such an extraordinary device has never been realized.
    Here we demonstrate the electrically controllable transition between type-I and
    type-II alignment and characterize its optical and photocurrent signatures in
    MoSe2/WS2 heterobilayers. Intrinsic MoSe2/WS2 heterobilayers exhibit type-I band
    alignment with dominant intralayer exciton luminescence from the MoSe2 layer.
    Under a strong vertical electric field, however, the heterobilayer transitions
    to type-II band alignment and switches on strong interlayer exciton luminescence.
    Moreover, as the interlayer exciton state is turned on, the trapping of free carriers
    suppresses the interlayer photocurrent, resulting in highly nonlinear photocurrent-voltage
    characteristics. The precise electrical control of band alignment, interlayer
    excitons, and free carrier trapping established here heralds a new class of versatile
    optical and (opto)electronic devices composed of van der Waals heterostructures.
  description_type: abstract
  lang: und

## Creator

- name: Jed Kistner-Morris
  role: author
- name: Ao Shi
  role: author
- name: Erfu Liu
  role: author
- name: Trevor Arp
  role: author
- name: Farima Farahmand
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Vivek Aji
  role: author
- name: Chun Hung Lui
  role: author
- name: Nathaniel Gabor
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Semiconductor heterojunctions
  schema: not_defined
- subject: band alignment
  schema: not_defined
- subject: MoSe2/WS2
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nature Communications
  issn: '20411723'
  volume: '15'
  issue: '1'
  article_number: '4075'

## Conference



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## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



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## Computational method



## Energy level/transition state



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## Fileset

- id: 2735ea99-cd51-4e5f-92e3-95e1f90722eb
  filename: s41467-024-48321-1.pdf
  content_type: application/pdf
  size: 1371091
  md5: d96ca73568e2a53498f7de5ec6cbd6ae

## Thumbnail

fileset_id: 2735ea99-cd51-4e5f-92e3-95e1f90722eb
filename: s41467-024-48321-1.pdf