# Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition

https://mdr.nims.go.jp/datasets/ee53d67e-c59b-4bfc-afef-79e00e66df4b

## File

- [manuscript (cleaned).pdf](https://mdr.nims.go.jp/filesets/0bd1ec64-f233-43b6-b28c-843d26b09f33/download) ([Detail](https://mdr.nims.go.jp/filesets/0bd1ec64-f233-43b6-b28c-843d26b09f33.md))

## Id

ee53d67e-c59b-4bfc-afef-79e00e66df4b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-10-04T02:59:18.806847Z

## Updated at

2024-01-05T13:13:56.865183Z

## Published at

2023-10-14T04:30:10.407556Z

## Doi

https://doi.org/10.48505/nims.4247

## First published url

https://doi.org/10.1109/TED.2023.3256349

## Date published

2023-03-16

## Recorded date published



## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen
    Precursor for Al2O3 Deposition
  title_type: original
  lang: en

## Description

- description: Electrical properties of boron-doped diamond (B-diamond) metal-oxide-semiconductor
    (MOS) capacitors and MOS field-effect transistors (MOSFETs) are enhanced by depositing
    the Al<sub>2</sub>O<sub>3</sub> gate insulator with an ozone precursor. There
    are no residual capacitance and improved negative flat band voltage shift for
    the capacitance-voltage curve of the Al<sub>2</sub>O<sub>3</sub> (ozone)/B-diamond
    MOS capacitor. The MOSFET operates well with the on/off ratio of around 108. It
    can still operate well even after annealing at 500 ℃ for as long as 10 hours with
    its on/off ratio larger than 106. Improvement of electrical properties for the
    Al<sub>2</sub>O<sub>3</sub> (ozone)/B-diamond MOS capacitor and MOSFET is possibly
    ascribed to the modification of surface defects for the B-diamond and the enhancement
    of film quality for the Al<sub>2</sub>O<sub>3</sub>.
  description_type: abstract
  lang: eng

## Creator

- name: Jiangwei Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Tokuyuki Teraji
  role: author
  orcid: https://orcid.org/0000-0002-7731-0547
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Bo Da
  role: author
  orcid: https://orcid.org/0000-0002-0785-8662
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: Institute of Electrical and Electronics Engineers (IEEE)

## Managing organization



## Keyword

- subject: Boron-doped diamond
  schema: not_defined
- subject: MOS capacitor
  schema: not_defined
- subject: MOSFET
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: IEEE TRANSACTIONS ON ELECTRON DEVICES
  issn: '00189383'
  volume: '70'
  issue: '5'
  start_page: 2199
  end_page: 2203

## Conference



## Related item



## Funding

- identifier: JP20H00313
  funder_name: MEXT
- identifier: JP20H02187
  funder_name: MEXT

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Fileset

- id: 0bd1ec64-f233-43b6-b28c-843d26b09f33
  filename: manuscript (cleaned).pdf
  content_type: application/pdf
  size: 1433488
  md5: 2efc6a131b39cd5aafc70f1c560adeaf

## Thumbnail

fileset_id: 0bd1ec64-f233-43b6-b28c-843d26b09f33
filename: manuscript (cleaned).pdf