# Overestimation of Operational Stability in Polymer-Based Organic Field-Effect Transistors Caused by Contact Resistance

https://mdr.nims.go.jp/datasets/edc38086-43fb-4674-adfd-f5f9ba003c9a

## File

- [overestimation-of-operational-stability-in-polymer-based-organic-field-effect-transistors-caused-by-contact-resistance.pdf](https://mdr.nims.go.jp/filesets/ab2618e2-cc81-4cab-9035-6bc1bdf4ad40/download) ([Detail](https://mdr.nims.go.jp/filesets/ab2618e2-cc81-4cab-9035-6bc1bdf4ad40.md))

## Id

edc38086-43fb-4674-adfd-f5f9ba003c9a

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-12-04T02:40:02.051778Z

## Updated at

2025-12-04T07:39:15.001544Z

## Published at

2025-12-04T07:23:47.210758Z

## Doi



## First published url

https://doi.org/10.1021/acsami.4c15666

## Date published

2024-12-11

## Recorded date published

2024-12-11

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Overestimation of Operational Stability in Polymer-Based Organic Field-Effect
    Transistors Caused by Contact Resistance
  title_type: original
  lang: en

## Description

- description: 'The bias-stress effects of bottom-gate top-contact polymer-based OFETs
    with different channel lengths were evaluated by repeating cycles of prolonged
    on-state gate-bias application and transfer characteristics measurements in linear
    regime. The thicknesses of PQTBTz-C12 active layers were 26 and 37 nm. All OFETs
    exhibited nonlinear transfer characteristics with a maximum transconductance.
    Both a shift in threshold voltage and a reduction in field-effect charge carrier
    mobility were apparently observed during the bias-stress application. When mobility
    and threshold voltage were conventionally extracted from the transfer characteristics
    around the maximum transconductance, the threshold voltage shift amount and mobility
    reduction depended on the channel length and were smaller in OFETs with short
    channels. After contact resistance correction, the channel length dependence disappeared.
    Therefore, the operational stability in OFETs with short channels: ≦ 50 (150)
    μm for the 26 (37) nm-thick active layers, was found to be overestimated without
    contact resistance correction. This erroneous evaluation would become more pronounced
    in short-channel, high-mobility OFETs.'
  description_type: abstract
  lang: en

## Creator

- name: Kenji Sakamoto
  role: author
  orcid: https://orcid.org/0000-0002-1379-874X
  organization: National Institute for Materials Science
- name: Takeshi Yasuda
  role: author
  orcid: https://orcid.org/0000-0003-4652-9105
  organization: National Institute for Materials Science
- name: Takeo Minari
  role: author
  orcid: https://orcid.org/0000-0001-7690-221X
  organization: National Institute for Materials Science
- name: Masafumi Yoshio
  role: author
  orcid: https://orcid.org/0000-0002-1442-4352
  organization: National Institute for Materials Science
- name: Junpei Kuwabara
  role: author
  orcid: https://orcid.org/0000-0002-9032-5655
- name: Masayuki Takeuchi
  role: author
  orcid: https://orcid.org/0000-0002-0207-0665
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: polymer-based organic field-effect transistors
  schema: not_defined
- subject: bias-stress effects
  schema: not_defined
- subject: contact resistance
  schema: not_defined
- subject: modified transmission line method
  schema: not_defined
- subject: operational stability
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ACS Applied Materials & Interfaces
  issn: '19448252'
  volume: '16'
  issue: '49'
  start_page: 68081
  end_page: 68090

## Conference



## Related item



## Funding

- identifier: JPMXP1223NM5185
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
  description: ナノレベルで構造制御された有機薄膜の作製とそれを用いたデバイスの作製・評価
- identifier: 20K05310
  funder_name: Japan Society for the Promotion of Science
  description: 高分子有機トランジスタの高移動度・高安定動作実現における液晶性の重要性

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: ab2618e2-cc81-4cab-9035-6bc1bdf4ad40
  filename: overestimation-of-operational-stability-in-polymer-based-organic-field-effect-transistors-caused-by-contact-resistance.pdf
  content_type: application/pdf
  size: 4286400
  md5: 19832f6e143f705f0de8d59f8678bd4b

## Thumbnail

fileset_id: ab2618e2-cc81-4cab-9035-6bc1bdf4ad40
filename: overestimation-of-operational-stability-in-polymer-based-organic-field-effect-transistors-caused-by-contact-resistance.pdf