# Zinc Stabilized Cation Ordered Chalcopyrite Thin Film for Enhanced Thermoelectric Power Generation Near Room Temperature

https://mdr.nims.go.jp/datasets/ed915a5d-b0e5-4cc6-9f56-a1b8a32c9282

## File

- [MDI-ACS Materials Letters--Zinc Stabilized Chalcopyrite CuFeS2 Thin Film for the Enhanced Thermoelectric Power Generation Near Room Temperature.pdf](https://mdr.nims.go.jp/filesets/29e90a68-aa65-4329-808a-e6bc2148e514/download) ([Detail](https://mdr.nims.go.jp/filesets/29e90a68-aa65-4329-808a-e6bc2148e514.md))

## Id

ed915a5d-b0e5-4cc6-9f56-a1b8a32c9282

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-11-08T15:36:42.456647Z

## Updated at

2025-11-10T00:41:02.375077Z

## Published at

2026-01-25T05:23:44.022207Z

## Doi

https://doi.org/10.48505/nims.5870

## First published url

https://doi.org/10.1021/acsmaterialslett.4c01898

## Date published

2025-03-03

## Recorded date published

2025-3-3

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Zinc Stabilized Cation Ordered Chalcopyrite Thin Film for Enhanced Thermoelectric
    Power Generation Near Room Temperature
  title_type: original
  lang: en

## Description

- description: Sulfides represent a significant family in thermoelectric materials
    for their low cost and promising performance. Sulfide thin films have been a very
    challenging topic due to the difficulty in finely controlling the composition.
    The fabrication of CuFeS2 thin film attracts researchers as CuFeS2 has been demonstrated
    to have a big potential in thermoelectricity and photovoltaic. Herein we reveal
    the newest finding of the Zn dopant to stabilize the chalcopyrite phase and suppress
    the reverse transformation back to wurtzite at high temperature in magnetron sputtered
    films. By increasing the Zn doping amount, the transformation temperature could
    be lowered and the majority carrier concentration could be optimized. Based on
    this principle, we obtained the chalcopyrite thin film by modulating the doping
    amount during co-deposition, and boosted the thin film’s thermoelectric properties
    to a power factor of 0.168 mW/m·K2 at room temperature and 0.285 mW/m·K2 at 523
    K, which is multifold than the wurtzite CuFeS2 thin film. The dimensionless figure
    of merit was comparable to the bulk counterpart. It is highlighted that the phase
    transformation from wurtzite CuFeS2 to the chalcopyrite CuFeS2 driven by Zn substitution
    is demonstrated for the first time by synchrotron-based in situ X-ray diffraction
    and X-ray absorption fine structure measurements, giving deep insights into the
    isomeric structure of CuFeS2 and doping effects on the local structure. This work
    also opens up the possibility of applying the sputtered sulfide thin films for
    flexible thermoelectric and magnetic devices. The in-depth understanding of phase
    transformation between CuFeS2 polymorphs might be significant for the ternary
    I-III-S(Se/Te)2 compound film fabrication and the doping modulation in thermoelectrics,
    solar cells, and other energy conversion.
  description_type: abstract
  lang: und

## Creator

- name: Hong Pang
  role: author
  orcid: https://orcid.org/0000-0002-9286-082X
  organization: National Institute for Materials Science
- name: Cédric Bourgès
  role: author
  orcid: https://orcid.org/0000-0001-9056-0420
  organization: National Institute for Materials Science
- name: Naohito Tsujii
  role: author
  orcid: https://orcid.org/0000-0002-6181-5911
  organization: National Institute for Materials Science
- name: Jha Rajveer
  role: author
  orcid: https://orcid.org/0000-0002-9481-8705
  organization: National Institute for Materials Science
- name: Naoyuki Kawamoto
  role: author
  orcid: https://orcid.org/0000-0002-2022-3987
  organization: National Institute for Materials Science
- name: Fumihiko Ichihara
  role: author
  orcid: https://orcid.org/0000-0002-0274-1342
  organization: National Institute for Materials Science
- name: Takahiro Baba
  role: author
- name: Tetsuya Baba
  role: author
  orcid: https://orcid.org/0000-0001-5820-3757
  organization: National Institute for Materials Science
- name: Naoki Sato
  role: author
  orcid: https://orcid.org/0000-0002-6429-0591
  organization: National Institute for Materials Science
- name: Yuichi Yamasaki
  role: author
  orcid: https://orcid.org/0000-0002-8560-3462
  organization: National Institute for Materials Science
- name: Takao Mori
  role: author
  orcid: https://orcid.org/0000-0003-2682-1846
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: thermoelectric
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in ACS Materials Letters, copyright © 2025 American
    Chemical Society after peer review and technical editing by the publisher. To
    access the final edited and published work see https://doi.org/10.1021/acsmaterialslett.4c01898.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-01-25
end_date: 2026-01-25

## Journal

- title: ACS Materials Letters
  issn: '26394979'
  volume: '7'
  issue: '3'
  start_page: 715
  end_page: 723

## Conference



## Related item



## Funding

- identifier: JPMJMI19A1
  funder_name: JST-Mirai Program

## Instrument



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## Fileset

- id: 29e90a68-aa65-4329-808a-e6bc2148e514
  filename: MDI-ACS Materials Letters--Zinc Stabilized Chalcopyrite CuFeS2 Thin Film
    for the Enhanced Thermoelectric Power Generation Near Room Temperature.pdf
  content_type: application/pdf
  size: 2403243
  md5: 341e198bf19f896c2f477cdad23d6a5c

## Thumbnail

fileset_id: 29e90a68-aa65-4329-808a-e6bc2148e514
filename: MDI-ACS Materials Letters--Zinc Stabilized Chalcopyrite CuFeS2 Thin Film
  for the Enhanced Thermoelectric Power Generation Near Room Temperature.pdf