Download file (2.29MB)
Download as zip (2.23MB)

コレクション

引用

説明:

Sulfides represent a significant family in thermoelectric materials for their low cost and promising performance. Sulfide thin films have been a very challenging topic due to the difficulty in finely controlling the composition. The fabrication of CuFeS2 thin film attracts researchers as CuFeS2 has been demonstrated to have a big potential in thermoelectricity and photovoltaic. Herein we reveal the newest finding of the Zn dopant to stabilize the chalcopyrite phase and suppress the reverse transformation back to wurtzite at high temperature in magnetron sputtered films. By increasing the Zn doping amount, the transformation temperature could be lowered and the majority carrier concentration could be optimized. Based on this principle, we obtained the chalcopyrite thin film by modulating the doping amount during co-deposition, and boosted the thin film’s thermoelectric properties to a power factor of 0.168 mW/m·K2 at room temperature and 0.285 mW/m·K2 at 523 K, which is multifold than the wurtzite CuFeS2 thin film. The dimensionless figure of merit was comparable to the bulk counterpart. It is highlighted that the phase transformation from wurtzite CuFeS2 to the chalcopyrite CuFeS2 driven by Zn substitution is demonstrated for the first time by synchrotron-based in situ X-ray diffraction and X-ray absorption fine structure measurements, giving deep insights into the isomeric structure of CuFeS2 and doping effects on the local structure. This work also opens up the possibility of applying the sputtered sulfide thin films for flexible thermoelectric and magnetic devices. The in-depth understanding of phase transformation between CuFeS2 polymorphs might be significant for the ternary I-III-S(Se/Te)2 compound film fabrication and the doping modulation in thermoelectrics, solar cells, and other energy conversion.

権利情報:

• In Copyright
  This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Materials Letters, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsmaterialslett.4c01898.

キーワード: thermoelectric

刊行年月日: 2025-03-03

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Materials Letters (ISSN: 26394979) vol. 7 issue. 3 p. 715-723

研究助成金:

• JST-Mirai Program JPMJMI19A1

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5870

公開URL: https://doi.org/10.1021/acsmaterialslett.4c01898

関連資料:

その他の識別子:

連絡先:

更新時刻: 2025-11-10 09:41:02 +0900

MDRでの公開時刻: 2026-01-25 14:23:44 +0900