# Metal doped polyaniline as neuromorphic circuit elements for in-materia computing

https://mdr.nims.go.jp/datasets/ec5ec2b2-8e88-40f9-aaf7-fd7796291a80

## File

- [2023_Higuchi_STAM_Metal doped polyaniline as neuromorphic circuit elements for in materia computing.pdf](https://mdr.nims.go.jp/filesets/43e961fa-1c2a-4d98-a5fb-fa18b0157d49/download) ([Detail](https://mdr.nims.go.jp/filesets/43e961fa-1c2a-4d98-a5fb-fa18b0157d49.md))

## Id

ec5ec2b2-8e88-40f9-aaf7-fd7796291a80

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-04-08T04:15:29.184686Z

## Updated at

2024-01-05T13:13:55.647724Z

## Published at

2023-04-11T01:51:56.775575Z

## Doi



## First published url

https://doi.org/10.1080/14686996.2023.2178815

## Date published

2023-12-31

## Recorded date published

2023-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Metal doped polyaniline as neuromorphic circuit elements for in-materia computing
  title_type: original
  lang: en

## Description

- description: Polyaniline-based atomic switches are material building blocks whose
    nanoscale structure and resultant neuromorphic character provide a new physical
    substrate for the development nextgeneration, nanoarchitectonic-enabled computing
    systems. Metal ion-doped devices consisting of a Ag/metal ion doped polyaniline/Pt
    sandwich structure were fabricated using an in situ wet process. The devices exhibited
    repeatable resistive switching between high (ON) and low (OFF) conductance states
    in both Ag+ and Cu2+ ion-doped devices. The threshold voltage for switching was>0.8
    V and average ON/OFF conductance ratios (30 cycles for 3 samples) were 13 and
    16 for Ag+ and Cu2+ devices, respectively. The ON state duration was determined
    by the decay to an OFF state after pulsed voltages of differing amplitude and
    frequency. The switching behaviour is analagous to short-term (STM) and long-term
    (LTM) memories of biological synapses. Memristive behaviour and evidence of quantized
    conductance were also observed and interpreted in terms of metal filament formation
    bridging the metal doped polymer layer. The successful realization of these properties
    within physical material systems indicate polyaniline frameworks as suitable neuromorphic
    substrates for in materia computing.
  description_type: abstract
  lang: eng

## Creator

- name: R. Higuchi
  role: author
  organization: National Institute for Materias Science (NIMS)
  department: International Center for Materials Nanoarchitectonics (WPI-MANA)
- name: S. Liak
  role: author
  orcid: https://orcid.org/0000-0003-4021-2895
  organization: University of California Los Angeles
  department: Department of Chemistry and Biochemistry
- name: H. O. Sillin
  role: author
  organization: University of California Los Angeles
  department: Department of Chemistry and Biochemistry
- name: T. Tsuruoka
  role: author
  organization: National Institute for Materials Science (NIMS)
  department: International Center for Materials Nanoarchitectonics (WPI-MANA)
- name: M. Kunitake
  role: author
  organization: Kumamoto University
  department: Graduate School of Science and Technology
- name: T. Nakayama
  role: author
  orcid: https://orcid.org/0000-0001-9696-475X
  organization: National Institute for Materials Science (NIMS)
  department: International Center for Materials Nanoarchitectonics (WPI-MANA)
- name: J. K. Gimzewski
  role: author
  organization: University of California Los Angeles
  department: California Nano System Institute (CNSI)
- name: A. Z. Stieg
  role: author
  organization: University of California Los Angeles
  department: California Nano System Institute (CNSI)

## Contact agent



## Publisher

organization: Informa UK Limited

## Managing organization



## Keyword

- subject: Nanoarchitectonics
  schema: not_defined
- subject: Neuromorphic
  schema: not_defined
- subject: atomic switch
  schema: not_defined
- subject: Memristor
  schema: not_defined
- subject: Computing
  schema: not_defined
- subject: Polyanilline
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
  issn: '14686996'
  volume: '24'
  issue: '1'
  start_page: 1
  end_page: 9

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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: 43e961fa-1c2a-4d98-a5fb-fa18b0157d49
  filename: 2023_Higuchi_STAM_Metal doped polyaniline as neuromorphic circuit elements
    for in materia computing.pdf
  content_type: application/pdf
  size: 4655648
  md5: 4489537e31b92743e3051f22f211f8dd

## Thumbnail

fileset_id: 43e961fa-1c2a-4d98-a5fb-fa18b0157d49
filename: 2023_Higuchi_STAM_Metal doped polyaniline as neuromorphic circuit elements
  for in materia computing.pdf