Metal doped polyaniline as neuromorphic circuit elements for in-materia computing

R. Higuchi; S. Liak; H. O. Sillin; T. Tsuruoka; M. Kunitake; T. Nakayama; J. K. Gimzewski; A. Z. Stieg

doi:10.1080/14686996.2023.2178815

論文 Metal doped polyaniline as neuromorphic circuit elements for in-materia computing

R. Higuchi (International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materias Science (NIMS)) ; S. Liak (Department of Chemistry and Biochemistry, University of California Los Angeles) ; H. O. Sillin (Department of Chemistry and Biochemistry, University of California Los Angeles) ; T. Tsuruoka (International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)) ; M. Kunitake (Graduate School of Science and Technology, Kumamoto University) ; T. Nakayama (International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)) ; J. K. Gimzewski (California Nano System Institute (CNSI), University of California Los Angeles) ; A. Z. Stieg (California Nano System Institute (CNSI), University of California Los Angeles)

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R. Higuchi, S. Liak, H. O. Sillin, T. Tsuruoka, M. Kunitake, T. Nakayama, J. K. Gimzewski, A. Z. Stieg. Metal doped polyaniline as neuromorphic circuit elements for in-materia computing. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS. 2023, 24 (1), 1-9. https://doi.org/10.1080/14686996.2023.2178815

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(abstract)

Polyaniline-based atomic switches are material building blocks whose nanoscale structure and resultant neuromorphic character provide a new physical substrate for the development nextgeneration, nanoarchitectonic-enabled computing systems. Metal ion-doped devices consisting of a Ag/metal ion doped polyaniline/Pt sandwich structure were fabricated using an in situ wet process. The devices exhibited repeatable resistive switching between high (ON) and low (OFF) conductance states in both Ag+ and Cu2+ ion-doped devices. The threshold voltage for switching was>0.8 V and average ON/OFF conductance ratios (30 cycles for 3 samples) were 13 and 16 for Ag+ and Cu2+ devices, respectively. The ON state duration was determined by the decay to an OFF state after pulsed voltages of differing amplitude and frequency. The switching behaviour is analagous to short-term (STM) and long-term (LTM) memories of biological synapses. Memristive behaviour and evidence of quantized conductance were also observed and interpreted in terms of metal filament formation bridging the metal doped polymer layer. The successful realization of these properties within physical material systems indicate polyaniline frameworks as suitable neuromorphic substrates for in materia computing.

権利情報:

Creative Commons BY Attribution 4.0 International

キーワード: Nanoarchitectonics, Neuromorphic, atomic switch, Memristor, Computing, Polyanilline

刊行年月日: 2023-12-31

出版者: Informa UK Limited

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SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (ISSN: 14686996) vol. 24 issue. 1 p. 1-9

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原稿種別: 出版者版 (Version of record)

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公開URL: https://doi.org/10.1080/14686996.2023.2178815

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更新時刻: 2024-01-05 22:13:55 +0900

MDRでの公開時刻: 2023-04-11 10:51:56 +0900

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