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説明:

Graphene-based moiré superlattices provide a versatile platform for exploring novel correlated and topological electronic states, driven by enhanced Coulomb interactions within flat bands. The intrinsic tunability of graphene’s multiple degrees of freedom enables precise control over these complex quantum phases. In this study, we observe a range of competing phases and their transitions in rhombohedral stacked hexalayer graphene on hexagonal boron nitride (𝑟−6⁢G⁡/hBN) moiré superlattices. When electrons are polarized away from the moiré superlattice, we first identify a Chern insulator with reversible Chern numbers at 𝑣=1 (one electron per moiré cell), revealing a competition between bulk and edge orbital magnetization. At 𝑣=2, three distinct insulating phases—spin-antiferromagnetic, spin-polarized, and valley-polarized—emerge under vertical displacement field 𝐷 and magnetic field 𝐵⊥, governed by hierarchical isospin symmetry breaking. Furthermore, charge density wave (CDW) states at 𝜈=1/3 and 2/3, along with a magnetic-field-induced stripe phase at 𝜈=1/2, demonstrate tunable correlated orders at fractional fillings. Our findings reveal a rich interplay of charge, isospin, topology, and magnetic field in rhombohedral graphene moiré superlattices.

権利情報:

• In Copyright
  

  @ American Physical Society

キーワード: Rhombohedral graphene, Moiré superlattice, Chern insulator

刊行年月日: 2025-09-26

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Letters (ISSN: 10797114) vol. 135 issue. 13 p. 136302-136302 136302

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology
• Yangyang Development Fund
• Postdoctoral Fellowship Program of CPSF GZB20250795
• National Natural Science Foundation of China 12350005
• National Natural Science Foundation of China 12174248
• National Natural Science Foundation of China 12488101
• National Key Research and Development Program of China 2021YFA1400100
• National Key Research and Development Program of China 2020YFA0309000
• Science and Technology Innovation Plan Of Shanghai Science and Technology Commission 24LZ1401100
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1103/chsq-ndzs

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更新時刻: 2026-06-26 16:56:46 +0900

MDRでの公開時刻: 2026-06-27 08:28:02 +0900