# Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

https://mdr.nims.go.jp/datasets/eaad674e-d67f-4808-8358-c79ddc3af46d

## File

- [Advanced Materials - 2024 - Gebeyehu - Decoupled High‐Mobility Graphene on Cu 111  Sapphire via Chemical Vapor Deposition.pdf](https://mdr.nims.go.jp/filesets/a47627a9-ec35-46c1-a7dd-ab835c786e4f/download) ([Detail](https://mdr.nims.go.jp/filesets/a47627a9-ec35-46c1-a7dd-ab835c786e4f.md))

## Id

eaad674e-d67f-4808-8358-c79ddc3af46d

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-07T10:10:14.609828Z

## Updated at

2026-02-14T12:50:13.644271Z

## Published at

2026-02-10T09:03:07.284950Z

## Doi



## First published url

https://doi.org/10.1002/adma.202404590

## Date published

2024-09-09

## Recorded date published

2024-11

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition
  title_type: original
  lang: en

## Description

- description: The growth of high-quality graphene on flat and rigid templates, such
    as metal thin films on insulating wafers, is regarded as a key enabler for technologies
    based on 2D materials. In this work, we introduce the growth of decoupled graphene
    via non-reducing low-pressure chemical vapor deposition (LPCVD) on crystalline
    Cu(111) films deposited on sapphire. The resulting film is atomically flat, with
    no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed
    by diffraction and spectroscopic analyses. Post-growth treatment of the partially
    decoupled graphene enables full and uniform oxidation of the interface, greatly
    simplifying subsequent transfer processes, particularly dry-pick up — a task that
    proves challenging when dealing with graphene directly synthesized on metallic
    Cu(111). Electrical transport measurements reveal high carrier mobility at room
    temperature, exceeding 104 cm2 V−1 s−1 on SiO2/Si and 105 cm2 V−1 s−1 upon encapsulation
    in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional
    material quality, in line with micro-mechanically exfoliated graphene flakes,
    and thus paves the way towards large-scale production of pristine graphene suitable
    for high-end applications.
  description_type: abstract
  lang: und

## Creator

- name: Zewdu M. Gebeyehu
  role: author
- name: Vaidotas Mišeikis
  role: author
- name: Stiven Forti
  role: author
- name: Antonio Rossi
  role: author
- name: Neeraj Mishra
  role: author
- name: Alex Boschi
  role: author
- name: Yurii P. Ivanov
  role: author
- name: Leonardo Martini
  role: author
- name: Michal W. Ochapski
  role: author
- name: Giulia Piccinini
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Giorgio Divitini
  role: author
- name: Fabio Beltram
  role: author
- name: Sergio Pezzini
  role: author
- name: Camilla Coletti
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: 'graphene
    '
  schema: not_defined
- subject: 'chemical vapor deposition (CVD)
    '
  schema: not_defined
- subject: 'high-mobility
    '
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc/4.0/
  date_licensed: 2024-09-09

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Materials
  issn: '09359648'
  volume: '36'
  issue: '44'
  article_number: '2404590'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: a47627a9-ec35-46c1-a7dd-ab835c786e4f
  filename: Advanced Materials - 2024 - Gebeyehu - Decoupled High‐Mobility Graphene
    on Cu 111  Sapphire via Chemical Vapor Deposition.pdf
  content_type: application/pdf
  size: 5942855
  md5: bfb9a0c0f6d1dc3aff3ddbd6f1f44b99

## Thumbnail

fileset_id: a47627a9-ec35-46c1-a7dd-ab835c786e4f
filename: Advanced Materials - 2024 - Gebeyehu - Decoupled High‐Mobility Graphene
  on Cu 111  Sapphire via Chemical Vapor Deposition.pdf