Afshan Begum
;
Yuanzhao Yao
;
Takashi Kuroda
(National Institute for Materials Science)
;
Yoshihiko Takeda
;
Naoki Ikeda
;
Yoshimasa Sugimoto
;
Takaaki Mano
;
Kazuaki Sakoda
説明:
(abstract)We successfully materialized a complete common band gap of a 6.0% width relative to the mid-gap frequency for transverse-electric-like eigenmodes, which was shared by topologically trivial and non-trivial photonic crystals (PhCs) fabricated in the top Si layer of silicon-on-insulator wafers. We verified the presence of the complete common band gap, which is a prerequisite for the topologically protected edge mode, by angle-resolved reflection spectroscopy in the mid-infrared range. By applying polarization selection rules expected from the spatial symmetry of the electromagnetic eigenmodes, we confirmed the band inversion at the center of the first Brillouin zone (Gamma point) in a purely experimental manner. We further detected the edge modes localized on the boundary between the trivial and non-trivial PhCs, which were linearly polarized in the vicinity of the Gamma point due to the mixture of upper and lower branches with circular polarizations, and obtained their dispersion relation.
権利情報:
キーワード: topological edge mode, photonic crystal, topological band gap, mid-infrared, angle-resolved spectroscopy, silicon on insulator
刊行年月日: 2023-11-15
出版者: Physical Society of Japan
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.7566/JPSJ.92.114402
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-03-19 16:57:25 +0900
MDRでの公開時刻: 2024-03-19 16:57:25 +0900
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別刷_jpsj.92.114402.pdf
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