# Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures

https://mdr.nims.go.jp/datasets/e9cc89fd-9688-4679-bec5-5f2360e022a9

## File

- [VHEforMDR.pdf](https://mdr.nims.go.jp/filesets/180892d9-d2a7-4c3c-8fea-83489fc76123/download) ([Detail](https://mdr.nims.go.jp/filesets/180892d9-d2a7-4c3c-8fea-83489fc76123.md))

## Id

e9cc89fd-9688-4679-bec5-5f2360e022a9

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-19T10:54:44.169461Z

## Updated at

2025-01-10T07:31:45.935312Z

## Published at

2025-01-10T07:31:45.987663Z

## Doi

https://doi.org/10.48505/nims.5267

## First published url

https://doi.org/10.1103/PhysRevB.109.075409

## Date published

2024-02-08

## Recorded date published

2024-2

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene
    heterostructures
  title_type: original
  lang: en

## Description

- description: In gapped Dirac materials, the topological current associated with
    each valley can flow in opposite directions creating long-range charge-neutral
    valley currents. We report valley currents in hBN/bilayer-graphene heterostructures
    with an energy gap, which is tunable by a perpendicular electric (displacement)
    field in a dual-gated structure. We observed significant nonlocal resistance,
    consistent with the scaling theory of the valley Hall effect. In the low-temperature
    limit, the nonlocal resistance approaches a saturated value near the “quantum
    limit,” indicating the emergence of quantum valley currents.
  description_type: abstract
  lang: eng

## Creator

- name: Takuya Iwasaki
  role: author
  orcid: https://orcid.org/0000-0002-1103-2433
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yoshifumi Morita
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: American Physical Society (APS)

## Managing organization



## Keyword

- subject: bilayer graphene
  schema: not_defined
- subject: hexagonal boron nitride
  schema: not_defined
- subject: heterostructure
  schema: not_defined
- subject: valley Hall effect
  schema: not_defined

## Rights

- description: "©2024 American Physical Society"
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Physical Review B
  issn: 1550235X
  volume: '109'
  issue: '7'
  article_number: '075409'

## Conference



## Related item



## Funding

- identifier: 21H01400
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMXP1223NM5186
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: 180892d9-d2a7-4c3c-8fea-83489fc76123
  filename: VHEforMDR.pdf
  content_type: application/pdf
  size: 1178631
  md5: 8ca15a801500f77a30a1b94c4b92b62c

## Thumbnail

fileset_id: 180892d9-d2a7-4c3c-8fea-83489fc76123
filename: VHEforMDR.pdf