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説明:

Tailoring charge transport in solids on demand is the overarching goal of condensed-matter research as it is crucial for electronic applications. Yet, often the proper tuning knob is missing and extrinsic factors such as impurities and disorder impede coherent conduction. Here we control the very buildup of an electronic band from impurity states within the pseudogap of ternary Fe2–xV1+x Al Heusler compounds via reducing the Fe content. Our density functional theory calculations combined with specific heat and electrical resistivity experiments reveal that, initially, these states are Anderson-localized at low V concentrations 0 < x < 0.1. As x increases, we monitor the formation of mobility edges upon the archetypal Mott-Anderson transition and map the increasing bandwidth of conducting states by thermoelectric measurements. Ultimately, delocalization of charge carriers in fully disordered V3Al results in a resistivity exactly at the Mott-Ioffe-Regel limit that is perfectly temperature-independent up to 700 K – more constant than constantan.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: thermoelectric

刊行年月日: 2025-08-06

出版者: American Physical Society (APS)

掲載誌:

• Physical Review Letters (ISSN: 10797114) vol. 135 issue. 6 p. 66302-66302 066302

研究助成金:

• Japan Science and Technology Agency
• JST-Mirai Program JPMJMI19A1
• Technische Universität Wien
• Laboratory Directed Research and Development

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1103/fz9j-bj87

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更新時刻: 2025-11-11 16:30:33 +0900

MDRでの公開時刻: 2025-11-11 16:24:14 +0900