# Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers

https://mdr.nims.go.jp/datasets/e8a4316d-5a04-4fa1-b2fc-a6953f7bc17b

## File

- [138-Appl. Phys. Lett. 126, 022407 (2025)-Sihombing.pdf](https://mdr.nims.go.jp/filesets/84b7b45a-2a3b-40c3-ae90-122bdb15c6b5/download) ([Detail](https://mdr.nims.go.jp/filesets/84b7b45a-2a3b-40c3-ae90-122bdb15c6b5.md))

## Id

e8a4316d-5a04-4fa1-b2fc-a6953f7bc17b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-10T09:53:24.631347Z

## Updated at

2025-02-12T03:30:13.458549Z

## Published at

2025-02-12T03:30:14.611053Z

## Doi



## First published url

https://doi.org/10.1063/5.0247660

## Date published

2025-01-13

## Recorded date published

2025-1-13

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions
    by interface-tuning with atomic-scale MgO insertion layers
  title_type: original
  lang: en

## Description

- description: 'We demonstrate a significant effect of atomic-scale MgO insertion
    layers on the tunnel magnetoresistance (TMR) in epitaxial magnetic tunnel junctions
    (MTJs) using a small bandgap oxide MgGa2O4. An enhanced TMR ratio of 151% at room
    temperature (resistance area product, RA: 23 kΩ ⋅ μm2) and 291% at 5 K (RA: 26 kΩ ⋅ μm2)
    were observed using 0.3 nm MgO insertion layers at the bottom and top barrier
    interfaces in Fe/MgGa2O4/Fe(001) MTJs with a total barrier thickness of 2.3 nm.
    The TMR showed a strong MgO thickness dependence. Microstructure analyses revealed
    that after MgO insertion, a homogeneous rock-salt structured Mg0.55Ga0.45O(001)
    barrier is formed, which differs from the nominal spinel crystal MgGa2O4. Elemental
    mapping of the MTJ showed that Ga diffusion into the adjacent Fe can be effectively
    suppressed while maintaining perfect lattice-matching at the Fe/barrier interfaces,
    thereby improving effective tunneling spin polarization through the barrier. The
    RA of the Mg0.55Ga0.45O (2.3 nm) MTJ is smaller than that of a comparable MgAl2O4
    barrier (2.3 nm), thanks to the lower barrier height of the Mg0.55Ga0.45O as confirmed
    by the current–voltage characteristics.'
  description_type: abstract
  lang: und

## Creator

- name: Rombang Rizky Sihombing
  role: author
  orcid: https://orcid.org/0000-0002-8461-7352
- name: Thomas Scheike
  role: author
  orcid: https://orcid.org/0000-0002-9163-5524
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
- name: Zhenchao Wen
  role: author
  orcid: https://orcid.org/0000-0001-7496-1339
- name: Seiji Mitani
  role: author
  orcid: https://orcid.org/0000-0002-1348-0774
- name: Hiroaki Sukegawa
  role: author
  orcid: https://orcid.org/0000-0002-4034-7848

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Spintronics
  schema: not_defined
- subject: magnetic tunnel junction
  schema: not_defined
- subject: MgGa2O4
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '126'
  issue: '2'

## Conference



## Related item



## Funding

- funder_name: KIOXIA Corporation
- identifier: JPMXP1122715503
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: 21H01750
  funder_name: Japan Society for the Promotion of Science
- identifier: 22H04966
  funder_name: Japan Society for the Promotion of Science
- identifier: 24H00408
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 84b7b45a-2a3b-40c3-ae90-122bdb15c6b5
  filename: 138-Appl. Phys. Lett. 126, 022407 (2025)-Sihombing.pdf
  content_type: application/pdf
  size: 2774411
  md5: 5c15f9308df46e7981c9cf2609b698fd

## Thumbnail

fileset_id: 84b7b45a-2a3b-40c3-ae90-122bdb15c6b5
filename: 138-Appl. Phys. Lett. 126, 022407 (2025)-Sihombing.pdf