# Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas

https://mdr.nims.go.jp/datasets/e8a4248c-403b-41c2-9589-01f887f9b826

## File

- [162102_1_5.0138736.pdf](https://mdr.nims.go.jp/filesets/4f292015-fb66-4eff-8da0-5bc3ec88f2e8/download) ([Detail](https://mdr.nims.go.jp/filesets/4f292015-fb66-4eff-8da0-5bc3ec88f2e8.md))
- [Supplementary_material.pdf](https://mdr.nims.go.jp/filesets/139b1081-79a6-4d97-9442-557cb35ee941/download) ([Detail](https://mdr.nims.go.jp/filesets/139b1081-79a6-4d97-9442-557cb35ee941.md))

## Id

e8a4248c-403b-41c2-9589-01f887f9b826

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-05-28T10:01:31.064992Z

## Updated at

2024-05-28T23:30:12.032191Z

## Published at

2024-05-28T23:30:12.146750Z

## Doi



## First published url

https://doi.org/10.1063/5.0138736

## Date published

2023-04-17

## Recorded date published

2023-4-17

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
  title_type: original
  lang: en

## Description

- description: In this study, we dry etched SiO2-masked (001) b-Ga2O3 substrates in
    HCl gas flow at a high temperature without plasma excitation. The etching was
    done selectively in window areas to form holes or trenches with inner sidewalls
    of (100) and/or {310} facets, which are the smallest surface-energy-density plane
    and oxygen-close-packed slip planes, respectively. In particular, (100) faceted
    sidewalls were flat and relatively close to the substrate surface normal. Therefore,
    this simple dry etching method is promising for fabricating plasma-damage-free
    trenches and fins used for b-Ga2O3-based power devices.
  description_type: abstract
  lang: en

## Creator

- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: etching
  schema: not_defined
- subject: HCl
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: APPLIED PHYSICS LETTERS
  issn: '00036951'
  volume: '122'
  issue: '16'
  article_number: '162102'

## Conference



## Related item



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## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



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## Fileset

- id: 4f292015-fb66-4eff-8da0-5bc3ec88f2e8
  filename: 162102_1_5.0138736.pdf
  content_type: application/pdf
  size: 2949214
  md5: a7a1ae62d70ec867ac08d941c2b0a221
- id: 139b1081-79a6-4d97-9442-557cb35ee941
  filename: Supplementary_material.pdf
  content_type: application/pdf
  size: 2651108
  md5: e918a5fd6f91b868cfe105cd5591e8f2

## Thumbnail

fileset_id: 4f292015-fb66-4eff-8da0-5bc3ec88f2e8
filename: 162102_1_5.0138736.pdf