説明:
(abstract)We investigated the dynamic evolution of defects in metal-doped graphene and electron-irradiated (non-doped) graphene using in situ transmission electron microscopy (operating at 80 kV below the theoretical knock-on threshold) combined with persistent homology (PH)-based analysis. PH is quantitative and multiscale analytical framework, describing the quantity and scale of k-dimensional holes. Here, we applied PH to in situ TEM images in order to quantitatively study the effects of metal doping on defect cluster dynamics. In situ observation demonstrated that Cr doping induces significantly faster structural dynamics compared to Cu doping at the same electron dose rate. Our developed PH-based analysis has been extended for application to both undoped and metal-doped graphene, enabling semi-automated visualization of the spatial arrangement of N-polygons and quantitative evaluation of the connectivity of non-hexagonal rings. The connectivity metric revealed that Cr-doped graphene exhibits larger structural fluctuations than electron-irradiated graphene, even at similar defect ratios. This finding quantitatively indicates that the global defect structure can be tuned by combining Cr-doping with electron irradiation.
権利情報:
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Ryuto Eguchi, Ayako Hashimoto; Effects of metal doping on defect dynamics in graphene: In situ TEM observation and persistent homology-based structural analysis. Appl. Phys. Lett. 13 July 2026; 129 (2): 021602 and may be found at https://doi.org/10.1063/5.0319808.
キーワード: Data analysis, Image processing, Electron radiation effects, Graphene, Transmission electron microscopy, Algebraic topology, Doping
刊行年月日: 2026-07-13
出版者: AIP Publishing
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研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1063/5.0319808
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更新時刻: 2026-10-15 13:12:49 +0900
MDRでの公開時刻: 2026-10-15 14:30:43 +0900
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