# Electrical detection of the flat-band dispersion in van der Waals field-effect structures

https://mdr.nims.go.jp/datasets/e7395551-fbf9-423f-98be-8feaa634eeb6

## File

- [s41565-023-01489-x.pdf](https://mdr.nims.go.jp/filesets/bd6e8701-c542-435a-8181-6b779ff67dce/download) ([Detail](https://mdr.nims.go.jp/filesets/bd6e8701-c542-435a-8181-6b779ff67dce.md))

## Id

e7395551-fbf9-423f-98be-8feaa634eeb6

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-27T04:19:48.398064Z

## Updated at

2025-02-27T23:30:48.434036Z

## Published at

2025-02-27T23:30:48.501891Z

## Doi



## First published url

https://doi.org/10.1038/s41565-023-01489-x

## Date published

2023-08-17

## Recorded date published

2023-12

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Electrical detection of the flat-band dispersion in van der Waals field-effect
    structures
  title_type: original
  lang: en

## Description

- description: Two-dimensional flat-band systems have recently attracted considerable
    interest due to the rich physics unveiled by emergent phenomena and correlated
    electronic states at van Hove singularities. However, the difficulties in electrically
    detecting the flat band position in field-effect structures are slowing down the
    investigation of their properties. In this work, we employ Indium Selenide (InSe)
    as a flat-band system due to a van Hove singularity at the valence band edge in
    a few-layer form of the material without the requirement of a twist angle. We
    investigate tunneling photocurrents in gated few-layer InSe structures and relate
    them to ambipolar transport and photoluminescence measurements. We observe an
    appearance of a sharp change in tunneling mechanisms due to the presence of the
    van Hove singularity at the flat band. We further corroborate our findings by
    studying tunneling currents as a reliable probe for the flat-band position up
    to room temperature. Our results create an alternative approach to studying flat-band
    systems in heterostructures of 2D materials.
  description_type: abstract
  lang: und

## Creator

- name: Gabriele Pasquale
  role: author
- name: Edoardo Lopriore
  role: author
- name: Zhe Sun
  role: author
- name: Kristiāns Čerņevičs
  role: author
- name: Fedele Tagarelli
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Oleg V. Yazyev
  role: author
- name: Andras Kis
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: Flat-band systems
  schema: not_defined
- subject: indium selenide
  schema: not_defined
- subject: tunnelling photocurrents
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Nature Nanotechnology
  issn: '17483395'
  volume: '18'
  issue: '12'
  start_page: 1416
  end_page: 1422

## Conference



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## Instrument



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## Measurement method



## Specimen



## Chemical composition



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## Fileset

- id: bd6e8701-c542-435a-8181-6b779ff67dce
  filename: s41565-023-01489-x.pdf
  content_type: application/pdf
  size: 1738991
  md5: 0e12d9b53c1b488d4b114b9c2d6fc59a

## Thumbnail

fileset_id: bd6e8701-c542-435a-8181-6b779ff67dce
filename: s41565-023-01489-x.pdf