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Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically detecting the flat band position in field-effect structures are slowing down the investigation of their properties. In this work, we employ Indium Selenide (InSe) as a flat-band system due to a van Hove singularity at the valence band edge in a few-layer form of the material without the requirement of a twist angle. We investigate tunneling photocurrents in gated few-layer InSe structures and relate them to ambipolar transport and photoluminescence measurements. We observe an appearance of a sharp change in tunneling mechanisms due to the presence of the van Hove singularity at the flat band. We further corroborate our findings by studying tunneling currents as a reliable probe for the flat-band position up to room temperature. Our results create an alternative approach to studying flat-band systems in heterostructures of 2D materials.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Flat-band systems, indium selenide, tunnelling photocurrents

刊行年月日: 2023-08-17

出版者: Springer Science and Business Media LLC

掲載誌:

• Nature Nanotechnology (ISSN: 17483395) vol. 18 issue. 12 p. 1416-1422

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41565-023-01489-x

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更新時刻: 2025-02-28 08:30:48 +0900

MDRでの公開時刻: 2025-02-28 08:30:48 +0900