# Effect of temperature and HCl partial pressure on the selective area gas etching of (001) β-Ga2O3

https://mdr.nims.go.jp/datasets/e5de02ed-52ee-4427-bf99-675980bb1812

## File

- [BGO(001)etch230802_clean.pdf](https://mdr.nims.go.jp/filesets/97b3c784-cb04-4e6b-b1c7-ddd7ade39b2b/download) ([Detail](https://mdr.nims.go.jp/filesets/97b3c784-cb04-4e6b-b1c7-ddd7ade39b2b.md))

## Id

e5de02ed-52ee-4427-bf99-675980bb1812

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T05:44:03.905663Z

## Updated at

2024-08-20T23:30:30.495238Z

## Published at

2024-08-20T23:30:30.581997Z

## Doi

https://doi.org/10.48505/nims.4353

## First published url

https://doi.org/10.35848/1347-4065/acee3b

## Date published

2023-08-01

## Recorded date published

2023-8-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Effect of temperature and HCl partial pressure on the selective area gas
    etching of (001) β-Ga2O3
  title_type: original
  lang: en

## Description

- description: We investigated the anisotropic selective-area HCl-gas etching behavior
    for SiO2-masked (001)  β-Ga2O3 and its dependence on the temperature T (548-949°C)
    and HCl partial pressure P0(HCl) (25-250 Pa). The cross-sectional width-to-depth
    aspect ratio of the etched trenches formed under the striped windows along [010]
    decreased with increasing the T or decreasing P0(HCl). Secondary ion mass spectrometry
    revealed a slight diffusion of Si into  β-Ga2O3 at T = 949°C while no diffusion
    was detected at T = 750℃. These results should be a practical guideline for the
    fabrication of desired three-dimensional structures such as fins/trenches for
    high-performance  β-Ga2O3-based power devices.
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: β-Ga2O3
  schema: not_defined
- subject: etching
  schema: not_defined

## Rights

- description: "© 2023 The Japan Society of Applied Physics\r\n<br>This is an author-created,
    un-copyedited version of an article accepted for publication/published\r\nin Japanese
    Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors
    or omissions in this version of the manuscript or any version derived from it.
    The Version of Record is available online at https://doi.org/10.35848/1347-4065/acee3b."
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2023-08-21
end_date: 2024-08-21

## Journal

- title: JAPANESE JOURNAL OF APPLIED PHYSICS
  issn: '00214922'
  volume: '62'
  issue: '8'
  start_page: 80901
  end_page: 80901

## Conference



## Related item



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## Instrument



## Instrument operator



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



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## Fileset

- id: 97b3c784-cb04-4e6b-b1c7-ddd7ade39b2b
  filename: BGO(001)etch230802_clean.pdf
  content_type: application/pdf
  size: 709055
  md5: d9fd2211bde5b78ef21eb73638890c02

## Thumbnail

fileset_id: 97b3c784-cb04-4e6b-b1c7-ddd7ade39b2b
filename: BGO(001)etch230802_clean.pdf