# Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV

https://mdr.nims.go.jp/datasets/e57d0429-2b9e-4e03-97b9-afb293100955

## File

- [manuscript.pdf](https://mdr.nims.go.jp/filesets/ce9e0280-02b8-43ea-8a6f-437e86a772f5/download) ([Detail](https://mdr.nims.go.jp/filesets/ce9e0280-02b8-43ea-8a6f-437e86a772f5.md))

## Id

e57d0429-2b9e-4e03-97b9-afb293100955

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-09-04T08:07:30.172314Z

## Updated at

2025-09-05T03:30:23.597498Z

## Published at

2025-09-05T03:18:52.751939Z

## Doi

https://doi.org/10.48505/nims.5730

## First published url

https://doi.org/10.1063/5.0278392

## Date published

2025-07-28

## Recorded date published

2025-7-28

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: Normally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7
    kV
  title_type: original
  lang: en

## Description

- description: Boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect
    transistors (MOSFETs) are fabricated on a 150 nm-thick epitaxial layer. The threshold
    voltage of the B-diamond MOSFET is measured at -8.0 V, indicating a normally-off
    behavior. Due to the high activation energy for the boron dopants and the relatively
    thin epitaxial layer, a limited number of holes are formed in the B-diamond and
    potentially trapped within the Al2O3/B-diamond interface, leading to the normally-off
    behavior observed in the B-diamond MOSFET. The absolute breakdown voltage for
    the B-diamond MOSFET is found to exceed 1.7 kV. When divided by the gate-to-drain
    electrode length of 11.3 μm, the breakdown field is calculated to be 1.52 MV/cm,
    which is more than two times larger than that of the previous B-diamond MOSFETs.
  description_type: abstract
  lang: und

## Creator

- name: J. Liu
  role: author
  orcid: https://orcid.org/0000-0003-2580-7401
- name: T. Teraji
  role: author
  orcid: https://orcid.org/0000-0002-7731-0547
- name: B. Da
  role: author
  orcid: https://orcid.org/0000-0002-0785-8662
- name: Y. Koide
  role: author

## Contact agent



## Publisher

organization: AIP Publishing

## Managing organization



## Keyword

- subject: diamond
  schema: not_defined

## Rights

- description: 'This article may be downloaded for personal use only. Any other use
    requires prior permission of the author and AIP Publishing. This article appeared
    in J. Liu, T. Teraji, B. Da, Y. Koide; Normally-off boron-doped diamond MOSFETs
    with a breakdown voltage over 1.7 kV. Appl. Phys. Lett. 28 July 2025; 127 (4):
    042601 and may be found at https://doi.org/10.1063/5.0278392.'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: Applied Physics Letters
  issn: '00036951'
  volume: '127'
  issue: '4'
  article_number: '042601'

## Conference



## Related item



## Funding

- identifier: JP23K03966
  funder_name: Japan Society for the Promotion of Science
- identifier: 20H05661
  funder_name: Japan Society for the Promotion of Science
- identifier: and JP20H00313
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMXS0118068379
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMJCR1773
  funder_name: Japan Science and Technology Agency
- identifier: JPMJMS2062
  funder_name: Japan Science and Technology Agency
- identifier: 23WS0311
  funder_name: Japan Science and Technology Agency
- identifier: 23NM5006
  funder_name: Japan Science and Technology Agency

## Instrument



## Instrument operator



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



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## Computational method



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## Custom property



## Fileset

- id: ce9e0280-02b8-43ea-8a6f-437e86a772f5
  filename: manuscript.pdf
  content_type: application/pdf
  size: 670348
  md5: 2008e2945044b04a13e24beeadeb902b

## Thumbnail

fileset_id: ce9e0280-02b8-43ea-8a6f-437e86a772f5
filename: manuscript.pdf