# Investigation of electric double layer effects at Li<sub>3</sub>PO<sub>4</sub> Li<sup>+</sup> solid electrolyte thin film interfaces using a field-effect transistor with Al-doped SiC (0001) single crystal

https://mdr.nims.go.jp/datasets/e56bf7d2-a1ba-4f1e-81ce-7fefb6cd0117

## File

- [20250115_SiC論文_ハイライトなし_追加コメント対応.pdf](https://mdr.nims.go.jp/filesets/f1bbee26-659c-416b-bf08-8077d7d1d2a5/download) ([Detail](https://mdr.nims.go.jp/filesets/f1bbee26-659c-416b-bf08-8077d7d1d2a5.md))

## Id

e56bf7d2-a1ba-4f1e-81ce-7fefb6cd0117

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-09T00:54:03.402551Z

## Updated at

2026-02-03T03:30:20.693440Z

## Published at

2026-02-03T00:46:30.779348Z

## Doi

https://doi.org/10.48505/nims.5314

## First published url

https://doi.org/10.35848/1347-4065/adabef

## Date published

2025-02-01

## Recorded date published

2025-2-1

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Investigation of electric double layer effects at Li<sub>3</sub>PO<sub>4</sub>
    Li<sup>+</sup> solid electrolyte thin film interfaces using a field-effect transistor
    with Al-doped SiC (0001) single crystal
  title_type: original
  lang: en

## Description

- description: "We developed a Li+ electrolyte-gated electric double-layer transistor
    (EDLT) using Al-doped SiC (0001) single crystal as the channel material. Thanks
    to the high tolerance of SiC single crystal to plasma irradiation, the Al-doped
    SiC EDLT was successfully fabricated with RF-sputtered Li3PO4 Li+ solid electrolyte
    thin film, which was previously difficult due to plasma-induced damage to the
    semiconductor channel. The EDLT operation of the device was confirmed by observing
    a 75% resistance change in the transfer characteristics. Hall measurements were
    employed to\r\nevaluate carrier density changes and directly investigate the behavior
    of the EDL at the interface. The calculated capacitance revealed contributions
    from both the EDL capacitance and depletion layer capacitance, indicating that
    the depletion layer formed on the SiC channel surface prevented accurate evaluation
    of EDL capacitance. For accurate EDL capacitance measurement, generating an accumulation
    layer on the surface of the semiconductor channel is found to be essential."
  description_type: abstract
  lang: und

## Creator

- name: Kaoru Shibata
  role: author
  orcid: https://orcid.org/0009-0002-4771-6375
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Wataru Namiki
  role: author
  orcid: https://orcid.org/0000-0003-4053-7366
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Daiki Nishioka
  role: author
  orcid: https://orcid.org/0000-0002-3369-7700
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kazuya Terabe
  role: author
  orcid: https://orcid.org/0000-0003-3988-3456
- name: Takashi Tsuchiya
  role: author
  orcid: https://orcid.org/0000-0002-6950-6160
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: IOP Publishing

## Managing organization



## Keyword

- subject: electric double layer transistor
  schema: not_defined
- subject: Li3PO4
  schema: not_defined
- subject: SiC
  schema: not_defined

## Rights

- description: "This is an author-created, un-copyedited version of an article accepted
    for publication/published in Japanese Journal of Applied Physics. IOP Publishing
    Ltd is not responsible for any errors or omissions in this version of the manuscript
    or\r\nany version derived from it. The Version of Record is available online at
    https://doi.org/10.35848/1347-4065/adabef."
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-02-03
end_date: 2026-02-03

## Journal

- title: Japanese Journal of Applied Physics
  issn: '00214922'
  volume: '64'
  issue: '2'

## Conference



## Related item



## Funding

- identifier: JPMJGX23S2
  funder_name: JST
  description: GteX

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Fileset

- id: f1bbee26-659c-416b-bf08-8077d7d1d2a5
  filename: 20250115_SiC論文_ハイライトなし_追加コメント対応.pdf
  content_type: application/pdf
  size: 2053765
  md5: eaabb2f2cd2ba933a0b09fef36f7b113

## Thumbnail

fileset_id: f1bbee26-659c-416b-bf08-8077d7d1d2a5
filename: 20250115_SiC論文_ハイライトなし_追加コメント対応.pdf