# Origin of Intrinsic Operational Instability in Organic Field-Effect Transistors with Aligned High-Mobility Donor-Acceptor Copolymer Active Layers https://mdr.nims.go.jp/datasets/e47a0145-0094-4b96-ab15-1f883dcc0f15 ## File - [231128_PCDTPT_stability_revised_for_AMT_B＆W.docx](https://mdr.nims.go.jp/filesets/0ed25552-e13f-41f9-8ca7-4fc34fe53000/download) ([Detail](https://mdr.nims.go.jp/filesets/0ed25552-e13f-41f9-8ca7-4fc34fe53000.md)) - [230929_PCDTPT_stability_SI_AMT_B&W.docx](https://mdr.nims.go.jp/filesets/c1a41cf7-50d9-45b1-92d2-2d1fc5e7f9f1/download) ([Detail](https://mdr.nims.go.jp/filesets/c1a41cf7-50d9-45b1-92d2-2d1fc5e7f9f1.md)) ## Id e47a0145-0094-4b96-ab15-1f883dcc0f15 ## Local identifier ## Visibility open_to_public ## State published ## Created at 2024-01-23T09:45:08.009299Z ## Updated at 2024-10-20T03:30:19.544682Z ## Published at 2024-10-20T03:30:20.684279Z ## Doi https://doi.org/10.48505/nims.4358 ## First published url https://doi.org/10.1002/admt.202301503 ## Date published 2023-10-20 ## Recorded date published 2024-1 ## Resource type journal_article ## Manuscript type accepted_manuscript ## Collection ## Title - title: Origin of Intrinsic Operational Instability in Organic Field-Effect Transistors with Aligned High-Mobility Donor-Acceptor Copolymer Active Layers title_type: original lang: en ## Description - description: The origin of intrinsic operational instability in OFETs is discussed by comparing bias stress effects of OFETs with unidirectionally aligned and unaligned active layers of two different semiconducting polymers under vacuum environment. By forming hydrophobic nano-groove structures on gate dielectric surfaces, a high-mobility donor-acceptor copolymer, PCDTPT and a benchmark semicrystalline polymer, PBTTT-C16 were successfully aligned. The experimental results indicate that an increase in mobility does not necessarily lead to an increase in operational stability. The interface trap density of states analysis revealed that the lower operational stability of PCDTPT-OFETs was not due to the tail state change but primarily due to the much larger turn-on voltage shift. The major mechanism causing turn-on voltage shift should be the charge carrier transfer from the channel to the gate dielectric. description_type: abstract lang: eng ## Creator - name: Kenji Sakamoto role: author orcid: https://orcid.org/0000-0002-1379-874X - name: Kirill Bulgarevich role: author orcid: https://orcid.org/0000-0003-1731-3153 - name: Takeshi Yasuda role: author orcid: https://orcid.org/0000-0003-4652-9105 - name: Takeo Minari role: author orcid: https://orcid.org/0000-0001-7690-221X - name: Masayuki Takeuchi role: author orcid: https://orcid.org/0000-0002-0207-0665 ## Contact agent ## Publisher organization: Wiley ## Managing organization ## Keyword - subject: polymer-based organic field-effect transistors schema: not_defined - subject: nano-grooves schema: not_defined - subject: bias-stress effects schema: not_defined - subject: charge carrier mobility schema: not_defined - subject: alignment control schema: not_defined ## Rights - description: 'This is the peer reviewed version of the following article: Origin of Intrinsic Operational Instability in Organic Field-Effect Transistors with Aligned High-Mobility Donor–Acceptor Copolymer Active Layers, which has been published in final form at https://doi.org/10.1002/admt.202301503. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.' identifier: http://rightsstatements.org/vocab/InC/1.0/ ## Other identifier(s) ## Data origin - data_origin_type: other ## Embargo start_date: 2023-10-20 end_date: 2024-10-20 ## Journal - title: Advanced Materials Technologies issn: 2365709X volume: '9' issue: '2' start_page: 2301503 end_page: 2301503 ## Conference ## Related item ## Funding - identifier: '20K05310 ' funder_name: 'JSPS ' description: '基盤研究(C)（一般）: 高分子有機トランジスタの高移動度・高安定動作実現における液晶性の重要性' - identifier: JPMXP1223NM5185 funder_name: the Ministry of Education, Culture, Sports, Science and Technology (MEXT) description: ナノレベルで構造制御された有機薄膜の作製とそれを用いたデバイスの作製・評価 ## Instrument ## Instrument operator ## Instrument managing organization ## Measurement method ## Specimen ## Chemical composition ## Structure for specimen ## Structural feature for specimen ## Specific property for specimen ## Process for specimen treatment ## Computational method ## Energy level/transition state ## Software ## Custom property ## Fileset - id: 0ed25552-e13f-41f9-8ca7-4fc34fe53000 filename: 231128_PCDTPT_stability_revised_for_AMT_B＆W.docx content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document size: 1154002 md5: 904114dd0fdddf808402316868b2c59f - id: c1a41cf7-50d9-45b1-92d2-2d1fc5e7f9f1 filename: 230929_PCDTPT_stability_SI_AMT_B&W.docx content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document size: 962939 md5: 9d11453fed3ff5d09cc72e43f06ddaea ## Thumbnail fileset_id: c1a41cf7-50d9-45b1-92d2-2d1fc5e7f9f1 filename: 230929_PCDTPT_stability_SI_AMT_B&W.docx