# Dielectric strength weakening of hexagonal boron nitride nanosheets under mechanical stress

https://mdr.nims.go.jp/datasets/e3e3ce78-34be-4771-9edd-aaada199bc31

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- [s41467-025-63358-6.pdf](https://mdr.nims.go.jp/filesets/f50464f8-7016-4a3c-a8ed-9de3b181f634/download)

## Id

e3e3ce78-34be-4771-9edd-aaada199bc31

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-14T11:41:51.832058Z

## Updated at

2026-02-16T23:30:11.416810Z

## Published at

2026-02-16T09:00:52.860333Z

## Doi



## First published url

https://doi.org/10.1038/s41467-025-63358-6

## Date published

2025-08-29

## Recorded date published



## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Dielectric strength weakening of hexagonal boron nitride nanosheets under
    mechanical stress
  title_type: original
  lang: en

## Description

- description: Hexagonal boron nitride (hBN) nanosheets are widely used as gate dielectric
    and insulating substrates for two-dimensional (2D) material-based electronic and
    optoelectronic devices. While mechanical stress in hBN nanosheets is often either
    intrinsically or intentionally introduced for 2D material-based devices during
    device fabrication and operation, the dielectric strength of hBN nanosheets under
    mechanical stress is still elusive. In this work, the dielectric strength of hBN
    nanosheets in a metal/hBN/metal structure is systematically studied when mechanical
    stress normal to nanosheets is applied. The dielectric strength of hBN nanosheets
    is found to be weakened with lower breakdown strength, shorter breakdown time,
    and larger leakage current under the mechanical stress with the order of 100 MPa,
    and the weakening is more remarkable for thinner nanosheets. The thickness-dependent
    weakening of dielectric strength is attributed to the thickness-dependent stress
    gradient in hBN nanosheets. Importantly, the ability of hBN nanosheets to block
    leakage current can be significantly degraded by mechanical stress even for thick
    nanosheets up to 41.3 nm. The results indicate that hBN nanosheets are not ideal
    materials for insulating gates or substrates for 2D material-based devices mechanical
    stress.
  description_type: abstract
  lang: und

## Creator

- name: Bingjie Wang
  role: author
- name: Chuanli Yu
  role: author
- name: Yifan Jiang
  role: author
- name: Chong Tian
  role: author
- name: Jiamin Tian
  role: author
- name: Shuo Li
  role: author
- name: Zheng Fang
  role: author
- name: Menglan Li
  role: author
- name: Weilong Wu
  role: author
- name: Zhaohe Dai
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Qing Chen
  role: author
- name: Xianlong Wei
  role: author

## Contact agent



## Publisher

organization: Springer Science and Business Media LLC

## Managing organization



## Keyword

- subject: hexagonal boron nitride
  schema: not_defined
- subject: 'dielectric strength
    '
  schema: not_defined
- subject: 'mechanical stress
    '
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/
  date_licensed: 2025-08-29

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Nature Communications
  issn: '20411723'
  volume: '16'
  article_number: '8078'

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## Specimen



## Chemical composition



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## Fileset

- id: f50464f8-7016-4a3c-a8ed-9de3b181f634
  filename: s41467-025-63358-6.pdf
  content_type: application/pdf
  size: 1741801
  md5: 34f06b7ee9728f20f517c263383ae179

## Thumbnail

fileset_id: f50464f8-7016-4a3c-a8ed-9de3b181f634
filename: s41467-025-63358-6.pdf