# Formation of electron traps in semiconducting polymers via a slow triple-encounter between trap precursor particles

https://mdr.nims.go.jp/datasets/e34b925e-8119-43a6-a871-210d6c13cfe0

## File

- [Formation of electron traps in semiconducting polymers via a slow triple-encounter between trap precursor particles.pdf](https://mdr.nims.go.jp/filesets/a9923753-3c75-4e71-aa4a-5888aa96ce9e/download) ([Detail](https://mdr.nims.go.jp/filesets/a9923753-3c75-4e71-aa4a-5888aa96ce9e.md))

## Id

e34b925e-8119-43a6-a871-210d6c13cfe0

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-02-06T04:51:38.523829Z

## Updated at

2025-07-16T07:16:23.759985Z

## Published at

2024-02-07T07:30:22.425131Z

## Doi

https://doi.org/10.48505/nims.4403

## First published url

https://doi.org/10.1080/14686996.2024.2312148

## Date published

2024-12-31

## Recorded date published

2024-12-31

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Formation of electron traps in semiconducting polymers via a slow triple-encounter
    between trap precursor particles
  title_type: original
  lang: en

## Description

- description: Already in 2012, Blom et al. reported (Nature Materials 2012, 11, 882)
    in semiconductingpolymers on a general electron-trap density of ≈ 3 × 1017 cm−3,
    centered at an energy of ≈3.6 eV below vacuum. It was suggested that traps have
    an extrinsic origin, with the water-oxygen complex [2(H2O)-O2] as a possible candidate,
    based on its electron affinity. However, further evidence is lacking and the origin
    of universal electron traps remained elusive. Here, in polymer diodes the temperature-dependence
    of reversible electron traps is investigated that develop under bias stress slowly
    over minutes to a density of 2 × 1017 cm−3, centered at an energy of 3.6 eV below
    vacuum. The trap build-up dynamics follows a 3rd-order kinetics, in line with
    that traps form via an encounter between three diffusing precursor particles.
    The accordance between universal and slowly evolving traps suggests that general
    electron traps in semiconducting polymers form via a triple-encounter process
    between oxygen and water molecules that form the suggested [2(H2O)-O2] complex
    as the trap origin.
  description_type: abstract
  lang: en

## Creator

- name: Mohammad Sedghi
  role: author
  organization: Malaysia–Japan International Institute of Technology
- name: Camilla Vael
  role: author
- name: Wei-Hsu Hu
  role: author
  organization: Malaysia–Japan International Institute of Technology
- name: Michael Bauer
  role: author
- name: Daniele Padula
  role: author
- name: Alessandro Landi
  role: author
  organization: CSIR-Advanced Materials Process Research Institute (AMPRI)
  department: Bhopal
- name: Mirko Lukovic
  role: author
- name: Matthias Diethelm
  role: author
- name: Gert-Jan Wetzelaer
  role: author
- name: Paul W. M. Blom
  role: author
- name: Frank Nüesch
  role: author
- name: Roland Hany
  role: author
  organization: Swiss Federal Laboratories for Materials Science and Technology(Empa)
  department: Laboratory for Functional Polymers

## Contact agent



## Publisher

organization: Taylor & Francis

## Managing organization



## Keyword

- subject: Polymer light-emitting diodes
  schema: not_defined
- subject: electron trap
  schema: not_defined
- subject: charge trap dynamics
  schema: not_defined
- subject: device physics
  schema: not_defined
- subject: semiconducting polymer
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science and Technology of Advanced Materials
  issn: '14686996'
  volume: '25'
  article_number: '2312148 '

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: a9923753-3c75-4e71-aa4a-5888aa96ce9e
  filename: Formation of electron traps in semiconducting polymers via a slow triple-encounter
    between trap precursor particles.pdf
  content_type: application/pdf
  size: 1466051
  md5: 01764bf135aaadba801ca05d0dbd1a08

## Thumbnail

fileset_id: a9923753-3c75-4e71-aa4a-5888aa96ce9e
filename: Formation of electron traps in semiconducting polymers via a slow triple-encounter
  between trap precursor particles.pdf