ジャーナル論文 Ultra-broadband bright light emission from a one-dimensional inorganic van der Waals material
Fateme Mahdikhany (author) (この著者で検索)
;
Sean Driskill (author) (この著者で検索)
;
Jeremy G. Philbrick (author) (この著者で検索)
;
Davoud Adinehloo (author) (この著者で検索)
;
Michael R. Koehler (author) (この著者で検索)
;
David G. Mandrus (author) (この著者で検索)
;
Takashi Taniguchi (author) (この著者で検索)
ORCID SAMURAI ;
Kenji Watanabe (author) (この著者で検索)
ORCID SAMURAI ;
Brian J. LeRoy (author) (この著者で検索)
;
Oliver L. A. Monti (author) (この著者で検索)
;
Vasili Perebeinos (author) (この著者で検索)
;
Tai Kong (author) (この著者で検索)
;
John R. Schaibley (author) (この著者で検索)
コレクション

引用
Fateme Mahdikhany, Sean Driskill, Jeremy G. Philbrick, Davoud Adinehloo, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, Oliver L. A. Monti, Vasili Perebeinos, Tai Kong, John R. Schaibley. Ultra-broadband bright light emission from a one-dimensional inorganic van der Waals material. APL Materials. 2024, 12 (1), 011112. https://doi.org/10.1063/5.0181682
SAMURAI

説明:

(abstract)

One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. We find that SbPS4 can readily be exfoliated to yield > 10 µm long nanobundles with typical diameters and thicknesses of 10 - 200 nm. SbPS4 is a direct gap semiconductor with an electronic band gap of ~2.5-3 eV. We investigated the optical response of SbPS4 nanobundles and discovered that upon excitation with 3.06 eV (405 nm) light, they emit extremely broad photoluminescence (PL) from ~1.2-1.9 eV with a quantum yield similar to that of hBN-encapsulated MoSe2. Using density functional theory, we calculate electronic and vibrational structure of the SbPS4 nanotubes, as well the strength of electron-phonon coupling. The measured Raman spectra of SbPS4 exhibits numerous low (< 300 cm-1) wavenumber Raman modes, which coincide in energy with the calculated vibrational modes with strong electron-phonon coupling. The large difference between the absorption and PL emission energies is explained by a large ~1 eV electron-hole binding energy and a ~200 meV self-trapping effect due to the coupling to vibrational degrees of freedom. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mixed-dimensional van der Waals heterostructures. Due to the bright and ultra-broadband PL, we believe that this class of 1D semiconductors has numerous potential applications including on-chip tunable nanolasers, and lighting applications that require ultra-violet to visible light conversion.

権利情報:

キーワード: One-dimensional van der Waals materials, SbPS4 nanotube bundles, optical response

刊行年月日: 2024-01-01

出版者: AIP Publishing

掲載誌:

  • APL Materials (ISSN: 2166532X) vol. 12 issue. 1 011112

研究助成金:

  • Air Force Office of Scientific Research FA9550-22-1-0312
  • Air Force Office of Scientific Research FA9550-22-1-0220
  • Air Force Office of Scientific Research FA9550-21-1-0219

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0181682

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更新時刻: 2025-02-14 12:31:59 +0900

MDRでの公開時刻: 2025-02-14 12:31:59 +0900

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