# High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy Apparatus Equipped with Concentric Hemispherical Analyzer

https://mdr.nims.go.jp/datasets/e1c0d599-5082-4a97-9dff-b17e7504b705

## File

- [JSA_Vol18_No3_174.pdf](https://mdr.nims.go.jp/filesets/a29fe16e-0c76-4c90-a35c-be8d3405787d/download) ([Detail](https://mdr.nims.go.jp/filesets/a29fe16e-0c76-4c90-a35c-be8d3405787d.md))

## Id

e1c0d599-5082-4a97-9dff-b17e7504b705

## Local identifier

identifier: mdr-schema-yaml/1831cn171

## Visibility

open_to_public

## State

published

## Created at

2021-08-05T16:24:15.032441Z

## Updated at

2024-01-05T13:13:47.172845Z

## Published at

2021-08-13T18:54:58.408546Z

## Doi



## First published url

https://doi.org/10.1384/jsa.18.174

## Date published

2016-04-03

## Recorded date published

2012

## Resource type

journal_article

## Manuscript type

na

## Collection



## Title

- title: High-Sensitivity and High-Depth Resolution Auger Depth Profiling Using an
    Inclined Holder based on Geometric Characteristics of Auger Electron Spectroscopy
    Apparatus Equipped with Concentric Hemispherical Analyzer
  title_type: original
  lang: en

## Description

- description: "半球型電子分光器を搭載したオージェ電子分光装置では，傾斜ホルダーを用いると装置のジオ メトリー特性との関係からイオン及び一次電子の入射角の自由度が大きくなる.特に試料回転の
    回転軸が一次電子の入射方向と一致する場合は，傾斜ホルダーの回転角によってイオン入射角を 設定でき，電子線の入射角は傾斜ホルダーの傾斜角度を選択することでイオン入射角と独立して
    任意に決定することができる.そこで，筆者らは電子およびイオンの両方を試料表面から極低角 度で入射できる高傾斜ホルダーを試作し，極低角度電子・イオン入射オージェ深さ方向分析法を
    開発した.この計測法により GaAs/AlAs 多層膜の深さ方向分析を行った結果，Al-LVV(68 eV)を 用いた深さ分解能として1.7 nmを達成した.さらに，Si/Geデルタドープ多層薄膜試料を測定し
    た結果，Ge デルタドープ6層すべてを高感度で検出できることがわかった.この報告では計測法 の原理ならびに得られた高感度，高深さ分解能データを紹介しながら本計測法について解説する.\r\nApplication
    of an inclined holder based on geometric properties of the Auger electron spectroscopy
    (AES) apparatus equipped with a concentric hemispherical analyzer to AES sputter
    depth profiling improves the flexibility in setting of the incidence angles of
    both electrons and ions. In particular, when the incidence direction of the electron
    beam coincides with the axis of the specimen azimuthal rotation, the incidence
    angle of ions can be obliquely determined by the rotation angle of the inclined
    holder and the incidence angle of the electron beam can be set independently by
    choosing the inclination angle of the inclined holder. Basing on this concept,
    we developed a 85°-high-angle inclined specimen holder which enabled the specimen
    surface to be irradiated by both the electron and ion beams at the glancing incidence.
    We have investigated the high-depth resolution AES sputter depth profiling analysis
    with the inclined specimen holder. In consequence, the resultant depth resolution
    for the GaAs/AlAs superlattice was found to be independent of the sputtered depth
    and the highest depth resolution of 1.7 nm was achieved with the Al-LVV Auger
    peak. The Auger depth profiles of the Si/Ge multiple delta-doped layers revealed
    that the Ge mono-layer can be in-depth profiled with high sensitivity and high
    depth resolution using the inclined specimen holder. In this article, we outline
    the basic comcept of the high-sensitivity and high-depth resolution AES sputter
    depth profiling using the inclined specimen holder and its application to the
    AES depth profiling."
  description_type: abstract
  lang: en

## Creator

- name: Tanuma, Shigeo
  role: author
  orcid: https://orcid.org/0000-0003-2628-9941
- name: Ogiwara, Toshiya
  role: author
  orcid: https://orcid.org/0000-0002-7376-6571
- name: Kim, Kyung Joong
  role: author
  orcid: https://orcid.org/0000-0001-5559-9784
- name: Nagatomi, Takaharu
  role: author
  orcid: https://orcid.org/0000-0002-3629-638X

## Contact agent



## Publisher

organization: Surface Analysis Society of Japan

## Managing organization



## Keyword

- subject: Auger Depth Profiling Analysis
  schema: not_defined
- subject: Si/Ge multiple delta-doped layers
  schema: not_defined
- subject: GaAs/AlAs Superlattice
  schema: not_defined
- subject: Inclined Holder
  schema: not_defined

## Rights

- description: In Copyright
  identifier: http://rightsstatements.org/vocab/InC/1.0/

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## Fileset

- id: a29fe16e-0c76-4c90-a35c-be8d3405787d
  filename: JSA_Vol18_No3_174.pdf
  content_type: application/pdf
  size: 1049594
  md5: 0a27e2eae4f1bdef902777d830dec2d6

## Thumbnail

fileset_id: a29fe16e-0c76-4c90-a35c-be8d3405787d
filename: JSA_Vol18_No3_174.pdf