# Displacement Field-Controlled Fractional Chern Insulators and Charge Density Waves in a Graphene/hBN Moiré Superlattice

https://mdr.nims.go.jp/datasets/dfa129a4-1286-4303-9f45-1eb408208271

## File

- [75gl-jzl6.pdf](https://mdr.nims.go.jp/filesets/7e5da6b5-917a-48ea-8f2b-f3b4c927f302/download) ([Detail](https://mdr.nims.go.jp/filesets/7e5da6b5-917a-48ea-8f2b-f3b4c927f302.md))

## Id

dfa129a4-1286-4303-9f45-1eb408208271

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-02-14T11:48:35.174188Z

## Updated at

2026-02-16T23:30:19.304436Z

## Published at

2026-02-16T09:00:52.552415Z

## Doi



## First published url

https://doi.org/10.1103/75gl-jzl6

## Date published

2025-07-24

## Recorded date published

2025-7

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Displacement Field-Controlled Fractional Chern Insulators and Charge Density
    Waves in a Graphene/hBN Moiré Superlattice
  title_type: original
  lang: en

## Description

- description: 'Rhombohedral stacked graphene (RSG) contains two key ingredients for
    the realization of correlated topological phases of matter: flat electronic bands
    and concentrated Berry curvature. The fractional quantum anomalous Hall effect
    was recently observed in an RSG-hexagonal boron nitride (hBN) moiré heterostructure
    when the conduction electrons were pushed away from the moiré interface by an
    applied electric displacement field. The question then arises about whether such
    topological states can also develop in RSG-hBN in a strong moiré potential. Here,
    we report the observation of low-field integer and fractional Chern insulator
    states in the moiré-proximal limit at filling factors ν = 1, 2/3, and 1/3 in addition
    to numerous trivial and topological charge density waves. We map out a correlated
    phase diagram that is highly sensitive to both displacement and magnetic fields,
    establishing the moiré-proximal regime as a tunable platform for studying the
    interplay between band topology and strong lattice effects.'
  description_type: abstract
  lang: und

## Creator

- name: Samuel H. Aronson
  role: author
- name: Tonghang Han
  role: author
- name: Zhengguang Lu
  role: author
- name: Yuxuan Yao
  role: author
- name: Jackson P. Butler
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Long Ju
  role: author
- name: Raymond C. Ashoori
  role: author

## Contact agent



## Publisher

organization: American Physical Society (APS)

## Managing organization



## Keyword

- subject: fractional Chern insulators
  schema: not_defined
- subject: 'graphene/hBN moiré     '
  schema: not_defined
- subject: 'displacement field control     '
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/
  date_licensed: 2025-07-24

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Physical Review X
  issn: '21603308'
  volume: '15'
  issue: '3'
  article_number: '031026'

## Conference



## Related item



## Funding

- identifier: DMR-1231319
  funder_name: National Science Foundation
- identifier: '1122374'
  funder_name: National Science Foundation Graduate Research Fellowship Program
- identifier: DE-SC0025325
  funder_name: U.S. Department of Energy
- funder_name: Office of Science
- funder_name: Basic Energy Sciences
- funder_name: Materials Sciences and Engineering Division

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## Fileset

- id: 7e5da6b5-917a-48ea-8f2b-f3b4c927f302
  filename: 75gl-jzl6.pdf
  content_type: application/pdf
  size: 12582868
  md5: 7c992f927fd25ad9eac6df72e019c527

## Thumbnail

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filename: 75gl-jzl6.pdf