# Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN/Bilayer Graphene Heterostructure Aligned with Near‐Zero Twist Angle

https://mdr.nims.go.jp/datasets/deaeefe5-73b4-4391-8ebc-bc9513962a17

## File

- [Advanced Physics Research - 2023 - Shintaku - Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN Bilayer.pdf](https://mdr.nims.go.jp/filesets/83a5e2f9-8394-45fa-a3d4-ee4087538d0b/download) ([Detail](https://mdr.nims.go.jp/filesets/83a5e2f9-8394-45fa-a3d4-ee4087538d0b.md))

## Id

deaeefe5-73b4-4391-8ebc-bc9513962a17

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-08-01T06:00:02.552012Z

## Updated at

2025-08-01T07:30:22.220021Z

## Published at

2025-08-01T07:18:21.836979Z

## Doi



## First published url

https://doi.org/10.1002/apxr.202300064

## Date published

2023-08-31

## Recorded date published

2024-1

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Berry Curvature Induced Valley Hall Effect in Non‐Encapsulated hBN/Bilayer
    Graphene Heterostructure Aligned with Near‐Zero Twist Angle
  title_type: original
  lang: en

## Description

- description: Valley Hall effect is observed in asymmetric single-layer and bilayer
    graphene systems. In single-layer graphene systems, asymmetry is introduced by
    aligning graphene with hexagonal boron nitride (hBN) with a near-zero twist angle,
    breaking the sub-lattice symmetry. Although a similar approach is used in bilayer
    graphene to break the layer symmetry and thereby observe the valley Hall effect,
    the bilayer graphene is sandwiched with hBN on both sides in those studies. This
    study looks at a much simpler, non-encapsulated structure where hBN is present
    only at the top of graphene. The crystallographic axes of both hBN and bilayer
    graphene are aligned. A clear signature of the valley Hall effect through non-local
    resistance measurement (RNL) is observed. The observed non-local resistance can
    be manipulated by applying a displacement field across the heterostructure. Furthermore,
    the electronic band structure and Berry curvature calculations validate the experimental
    observations.
  description_type: abstract
  lang: en

## Creator

- name: Teppei Shintaku
  role: author
- name: Afsal Kareekunnan
  role: author
- name: Masashi Akabori
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Hiroshi Mizuta
  role: author

## Contact agent



## Publisher

organization: Wiley

## Managing organization



## Keyword

- subject: Valley Hall effect
  schema: not_defined
- subject: Bilayer graphene
  schema: not_defined
- subject: Non-local resistance (RNL)
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Advanced Physics Research
  issn: '27511200'
  volume: '3'
  issue: '1'
  article_number: '2300064'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 83a5e2f9-8394-45fa-a3d4-ee4087538d0b
  filename: Advanced Physics Research - 2023 - Shintaku - Berry Curvature Induced
    Valley Hall Effect in Non‐Encapsulated hBN Bilayer.pdf
  content_type: application/pdf
  size: 1603868
  md5: 31c481e3542f1fefe8c501f0ea3ad96a

## Thumbnail

fileset_id: 83a5e2f9-8394-45fa-a3d4-ee4087538d0b
filename: Advanced Physics Research - 2023 - Shintaku - Berry Curvature Induced Valley
  Hall Effect in Non‐Encapsulated hBN Bilayer.pdf