# HCl-gas etching of (001) β-Ga2O3 under oxygen supply

https://mdr.nims.go.jp/datasets/de0348a4-c4c5-449a-99ed-7a5109ffce6b

## File

- [HCl-gas etching behavior of 001 -Ga2O3 under oxygen supply.pdf](https://mdr.nims.go.jp/filesets/c4ee44b9-7144-4144-9119-3c434b49fcc0/download) ([Detail](https://mdr.nims.go.jp/filesets/c4ee44b9-7144-4144-9119-3c434b49fcc0.md))

## Id

de0348a4-c4c5-449a-99ed-7a5109ffce6b

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-09-03T23:01:10.728737Z

## Updated at

2025-09-04T03:30:19.567544Z

## Published at

2025-09-04T03:20:11.372421Z

## Doi



## First published url

https://doi.org/10.1080/14686996.2025.2546285

## Date published

2025-12-31

## Recorded date published

2025-12-31

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: HCl-gas etching of (001) β-Ga2O3 under oxygen supply
  title_type: original
  lang: en

## Description

- description: O2供給下で(001) β-Ga2O3のHClガスエッチングを行い、O2供給分圧やエッチング温度が平坦面のエッチレートや表面粗さに与える影響を明らかにした。また、選択エッチング技術を用いて横方向のエッチレートやその異方性がO2供給分圧やエッチング温度にどのような影響を受けるのかも明らかにした。
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Takayoshi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8550-9735
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group

## Contact agent



## Publisher

organization: Taylor & Francis

## Managing organization



## Keyword

- subject: Ga2O3
  schema: not_defined
- subject: etching
  schema: not_defined
- subject: plasma-free
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
  issn: '18785514'
  volume: '26'
  issue: '1'

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: c4ee44b9-7144-4144-9119-3c434b49fcc0
  filename: HCl-gas etching behavior of 001 -Ga2O3 under oxygen supply.pdf
  content_type: application/pdf
  size: 6132729
  md5: a690b883114e77260f3176042516ec9e

## Thumbnail

fileset_id: c4ee44b9-7144-4144-9119-3c434b49fcc0
filename: HCl-gas etching behavior of 001 -Ga2O3 under oxygen supply.pdf