# High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications

https://mdr.nims.go.jp/datasets/dcf73837-6122-4517-b57e-06bda7ec99b3

## File

- [manuscript-liwensang-for fundamental research.pdf](https://mdr.nims.go.jp/filesets/d298edc5-12ee-48c3-9abe-9cade6be11ea/download) ([Detail](https://mdr.nims.go.jp/filesets/d298edc5-12ee-48c3-9abe-9cade6be11ea.md))

## Id

dcf73837-6122-4517-b57e-06bda7ec99b3

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2023-12-22T04:18:58.389383Z

## Updated at

2024-12-17T07:30:45.762523Z

## Published at

2024-12-17T07:30:45.893769Z

## Doi

https://doi.org/10.48505/nims.5164

## First published url

https://doi.org/10.1016/j.fmre.2021.11.024

## Date published

2021-12-01

## Recorded date published

2023-5

## Resource type

journal_article

## Manuscript type

authors_original

## Collection



## Title

- title: High-pressure MOCVD growth of InGaN thick films toward the photovoltaic applications
  title_type: original
  lang: en

## Description

- description: We report on the growth of 0.3-1 μm-thick InGaN films with a specially
    designed vertical-type high-pressure MOCVD at the pressure up to 2.5 atms. The
    In incorporation is found to be greatly enhanced at the elevated pressures although
    the growth temperatures are the same. The phase separations are inhibited when
    the growth pressure is higher than atmospheric pressure, leading to the improved
    crystalline quality and better surface morphologies especially for the In-rich
    InGaN.
  description_type: abstract
  lang: eng

## Creator

- name: Liwen Sang
  role: author
  orcid: https://orcid.org/0000-0003-0946-1025
  organization: National Institute for Materials Science
- name: Meiyong Liao
  role: author
  orcid: https://orcid.org/0000-0003-1361-4266
  organization: National Institute for Materials Science
- name: Masatomo Sumiya
  role: author
  orcid: https://orcid.org/0000-0003-0960-3812
  organization: National Institute for Materials Science
- name: Xuelin Yang
  role: author
- name: Bo Shen
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: High-pressure
  schema: not_defined
- subject: MOCVD
  schema: not_defined
- subject: InGaN
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Fundamental Research
  issn: '26673258'
  volume: '3'
  issue: '3'
  start_page: 403
  end_page: 408

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## Instrument



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## Specimen



## Chemical composition



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## Fileset

- id: d298edc5-12ee-48c3-9abe-9cade6be11ea
  filename: manuscript-liwensang-for fundamental research.pdf
  content_type: application/pdf
  size: 4320060
  md5: 8bd727a6000fe59ccc2aa7c1c2ab0cb6

## Thumbnail

fileset_id: d298edc5-12ee-48c3-9abe-9cade6be11ea
filename: manuscript-liwensang-for fundamental research.pdf