# Air Damping Effect on Quality-Factor in High-Order Resonance Modes of Single-Crystal Diamond Microcantilevers

https://mdr.nims.go.jp/datasets/dcb35892-5e51-44a3-8beb-444ecd5382a5

## File

- [23p-12E-6.pdf](https://mdr.nims.go.jp/filesets/c0c256bf-9b4e-45f9-9a3d-a9d9d14aa466/download) ([Detail](https://mdr.nims.go.jp/filesets/c0c256bf-9b4e-45f9-9a3d-a9d9d14aa466.md))

## Id

dcb35892-5e51-44a3-8beb-444ecd5382a5

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-10-10T10:06:27.015383Z

## Updated at

2026-10-13T07:40:16.762403Z

## Published at

2026-10-13T09:28:37.412261Z

## Doi

https://doi.org/10.48505/nims.8652

## First published url



## Date published



## Recorded date published



## Resource type

conference_paper

## Manuscript type

na

## Collection



## Title

- title: Air Damping Effect on Quality-Factor in High-Order Resonance Modes of Single-Crystal
    Diamond Microcantilevers
  title_type: original
  lang: en

## Description

- description: "Here, we fabricated diamond cantilevers 7 and investigated the effect
    of ambient gas atmosphere on Q-factor in high-order resonance of SCD MEMS cantilevers.
    The Q-factors of a 120 µm long SCD microcantilever in three different resonance
    modes (1st, 2nd and 3rd), are plotted as a function of the ambient pressure varied
    from high vacuum (10-4 Pa) to atmospheric pressure (105 Pa). The inset demonstrates
    the relative stability of the resonance frequency (f) versus gas pressure for
    all three modes. The Q-factor of the high order modes is found to be nearly constant
    up to pressures between 10-4 to 100 Pa and then decreases to less than 1,000 in
    103 Pa, similar to the fundamental mode. Compared to the high order modes, the
    first order mode has higher Q-factor in vacuum (intrinsic regime). \tNevertheless,
    the high-order modes in the molecular and viscous flow regimes (P > 10 Pa) exhibit
    higher Q-factors than the fundamental mode. Hence, in low-vacuum and atmospheric
    environments, the high-order resonance modes provide a profound sensitivity improvement
    for MEMS sensing devices, attributed to the much higher f·Q product."
  description_type: abstract
  lang: eng

## Creator

- name: Guo Chen
  role: author
  orcid: https://orcid.org/0009-0004-9263-5616
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Zilong Zhang
  role: author
  orcid: https://orcid.org/0000-0002-9759-9253
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Keyun G
  role: author
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Liwen Sang
  role: author
  orcid: https://orcid.org/0000-0003-0946-1025
  organization: National Institute for Materials Science
  department: Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials
    Field/Thin Film Electronics Group
- name: Satoshi Koizumi
  role: author
  orcid: https://orcid.org/0000-0003-4961-5658
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group
- name: Yasuo Koide
  role: author
  orcid: https://orcid.org/0000-0001-8321-9822
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials
- name: Zhaohui Huang
  role: author
  organization: China University of Geosciences
- name: Meiyong Liao
  role: author
  orcid: https://orcid.org/0000-0003-1361-4266
  organization: National Institute for Materials Science
  department: Research Center for Electronic and Optical Materials/Functional Materials
    Field/Ultra-wide Bandgap Semiconductors Group

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## Keyword

- subject: Diamond
  schema: not_defined
- subject: MEMS
  schema: not_defined

## Rights

- identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal



## Conference

name: 2024年第71回応用物理学会春季学術講演会
start_date: 2024-03-22
end_date: 2024-03-25
identifier: https://meeting.jsap.or.jp/

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## Fileset

- id: c0c256bf-9b4e-45f9-9a3d-a9d9d14aa466
  filename: 23p-12E-6.pdf
  content_type: application/pdf
  size: 456163
  md5: cc443b151888cbe305e71c56f51e63b9

## Thumbnail

fileset_id: c0c256bf-9b4e-45f9-9a3d-a9d9d14aa466
filename: 23p-12E-6.pdf