Charge pumping in h-BN-encapsulated graphene driven by surface acoustic waves

Dublin M. Nichols; Jameson G. Berg; Takashi Taniguchi; Kenji Watanabe; Pallavi Dhagat; Vikram V. Deshpande; Albrecht Jander; Ethan D. Minot

doi:10.1063/5.0220123

ジャーナル論文 Charge pumping in h-BN-encapsulated graphene driven by surface acoustic waves

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Dublin M. Nichols, Jameson G. Berg, Takashi Taniguchi, Kenji Watanabe, Pallavi Dhagat, Vikram V. Deshpande, Albrecht Jander, Ethan D. Minot. Charge pumping in h-BN-encapsulated graphene driven by surface acoustic waves. Journal of Applied Physics. 2024, 136 (2), . https://doi.org/10.1063/5.0220123

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Surface acoustic waves (SAWs) can produce dynamic, periodic potentials inside 1D and 2D materials. Such periodic potentials have been used, or proposed, for a variety of applications, including acoustoelectric charge pumping. Here, we study acoustoelectric charge pumping in ultraclean graphene. Using a graphite top gate on boron-nitride-encapsulated graphene, we tune carrier concentration over a wide range, allowing us to study the acoustoelectric signal in the mixed-carrier and single-carrier regimes. In contrast to previous studies, our model describes the acoustoelectric signal at all carrier densities, including the charge neutrality point, demonstrating a complete quantitative understanding of acoustoelectric charge pumping in graphene. This quantitative model will aid future SAW-enabled probes of quantum phenomena in 2D materials and informs the design of novel SAW sensors.

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