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説明:

Surface acoustic waves (SAWs) can produce dynamic, periodic potentials inside 1D and 2D materials. Such periodic potentials have been used, or proposed, for a variety of applications, including acoustoelectric charge pumping. Here, we study acoustoelectric charge pumping in ultraclean graphene. Using a graphite top gate on boron-nitride-encapsulated graphene, we tune carrier concentration over a wide range, allowing us to study the acoustoelectric signal in the mixed-carrier and single-carrier regimes. In contrast to previous studies, our model describes the acoustoelectric signal at all carrier densities, including the charge neutrality point, demonstrating a complete quantitative understanding of acoustoelectric charge pumping in graphene. This quantitative model will aid future SAW-enabled probes of quantum phenomena in 2D materials and informs the design of novel SAW sensors.

権利情報:

• Creative Commons BY-NC Attribution-NonCommercial 4.0 International
  

キーワード: Surface acoustic waves, acoustoelectric charge pumping, graphene

刊行年月日: 2024-07-14

出版者: AIP Publishing

掲載誌:

• Journal of Applied Physics (ISSN: 00218979) vol. 136 issue. 2

研究助成金:

• National Science Foundation 2004968
• National Nanotechnology Coordinating Office NNCI-2025489
• Japan Society for the Promotion of Science 21H05233
• Japan Society for the Promotion of Science 23H02052
• National Science Foundation 2005182

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1063/5.0220123

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更新時刻: 2025-02-05 12:31:11 +0900

MDRでの公開時刻: 2025-02-05 12:31:11 +0900