# Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching

https://mdr.nims.go.jp/datasets/db6eadfe-d9ad-4772-88c1-9245cb7b1e09

## File

- [Clean manuscript(211010).pdf](https://mdr.nims.go.jp/filesets/151cd755-36cd-4d3b-b7e1-37fb572cd238/download) ([Detail](https://mdr.nims.go.jp/filesets/151cd755-36cd-4d3b-b7e1-37fb572cd238.md))
- [Figures.pdf](https://mdr.nims.go.jp/filesets/59261643-e02b-4667-a2c8-1d6e684a65e0/download) ([Detail](https://mdr.nims.go.jp/filesets/59261643-e02b-4667-a2c8-1d6e684a65e0.md))

## Id

db6eadfe-d9ad-4772-88c1-9245cb7b1e09

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-01-07T05:54:29.699455Z

## Updated at

2024-01-22T00:38:31.178250Z

## Published at

2024-01-22T03:30:27.258841Z

## Doi

https://doi.org/10.48505/nims.4355

## First published url

https://doi.org/10.1016/j.jcrysgro.2021.126387

## Date published

2021-10-19

## Recorded date published

2021-12

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: " α-Ga2O3における貫通転位のHClガスエッチによる可視化"
  title_type: alternative
  lang: ja
- title: Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas
    etching
  title_type: original
  lang: en

## Description

- description: Threading dislocations in a heteroepitaxial α-Ga2O3 film was visualized
    as etch pits on the surface. We found that etch pits were formed on a c-plane
    α-Ga2O3 epilayer by HCl gas etching. The epilayer was prepared by using epitaxial
    lateral overgrowth technique with a stripe mask pattern. The etch pit density
    was very high in the window region, and much lower in the laterally grown area
    on the mask. A line of etch pits was observed at a coalesced boundary. Thus, the
    etch pit density had a clear correlation with the dislocation density. The correspondence
    between the etch pits and dislocations was confirmed by cross-sectional bright-
    and dark-field transmission electron microscopy (TEM). This gas-etching technique
    can clarify the distribution of dislocations in a wide area, which cannot be explored
    effectively by TEM.
  description_type: abstract
  lang: eng

## Creator

- name: Yuichi Oshima
  role: author
  orcid: https://orcid.org/0000-0001-8293-4891
  organization: National Institute for Materials Science
- name: Shingo Yagyu
  role: author
- name: Takashi Shinohe
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: α-Ga2O3
  schema: not_defined
- subject: dislocation
  schema: not_defined
- subject: etching
  schema: not_defined

## Rights

- description: "© 2021. This manuscript version is made available under the CC-BY-NC-ND
    4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/."
  identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin



## Embargo



## Journal

- title: JOURNAL OF CRYSTAL GROWTH
  issn: '00220248'
  volume: '576'
  start_page: 126387
  end_page: 126387

## Conference



## Related item



## Funding



## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 151cd755-36cd-4d3b-b7e1-37fb572cd238
  filename: Clean manuscript(211010).pdf
  content_type: application/pdf
  size: 352106
  md5: b286a849cd5977bda66902c8e13f4a4d
- id: 59261643-e02b-4667-a2c8-1d6e684a65e0
  filename: Figures.pdf
  content_type: application/pdf
  size: 1481377
  md5: cff3dc030452864ff4ffbf48fd97c86a

## Thumbnail

fileset_id: 151cd755-36cd-4d3b-b7e1-37fb572cd238
filename: Clean manuscript(211010).pdf