# Direct Analysis of Stacked Au/Ti/In<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/p<sup>+</sup>-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy

https://mdr.nims.go.jp/datasets/db391d8f-2d6d-483e-87df-1c7c8a49d800

## File

- [NIMS_MDR.pdf](https://mdr.nims.go.jp/filesets/ad8fa049-392e-4689-8f0e-f588d2492ca0/download) ([Detail](https://mdr.nims.go.jp/filesets/ad8fa049-392e-4689-8f0e-f588d2492ca0.md))

## Id

db391d8f-2d6d-483e-87df-1c7c8a49d800

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-10-09T05:13:15.774315Z

## Updated at

2025-05-14T23:30:10.319732Z

## Published at

2025-05-14T23:17:35.668572Z

## Doi

https://doi.org/10.48505/nims.4829

## First published url

https://doi.org/10.1021/acsaelm.4c00049

## Date published

2024-05-28

## Recorded date published

2024-5-28

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Direct Analysis of Stacked Au/Ti/In<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub>/p<sup>+</sup>-Si
    Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy
  title_type: original
  lang: en

## Description

- description: Oxygen transport mechanisms for two different Au/Ti/In2O3/Al2O3/p+-Si
    samples were experimentally evaluated with hard X-ray photoelectron spectroscopy
    (HAXPES). The deposition temperature for atomic layer deposition (ALD) of In2O3,
    as well as the bias voltages applied on the entire stacked structures,were the
    main parameters used in the work. Chemical analyses of the In2O3 layers deposited
    at 150 ◦C and 200 ◦C for the samples named T_150 and T_200, respectively, revealed
    a decreased carbon impurity content in the host In2O3 used as a dopant. Ex-situ
    interfacial analysis of In2O3/Al2O3 also indicated oxygen transport from Al2O3
    to In2O3. Moreover, we observed that the Ti adhesion metal attracted oxygen and
    carbon from the In2O3 to form TiO2 and TiC conductive interlayers. Furthermore,
    operando-HAXPES under an applied bias voltage also revealed that In2O3 underwent
    phase separation, likely due to variations in the space charge (carriers) around
    the In2O3/Al2O3 interface for the T_150 sample. Finally, our results emphasize
    the prominent roles of migration for the ionic oxygen/carbon species and the uncompensated
    interfacial charge formed by the bias voltage for the metal-semiconductor-oxide
    stacked structure.
  description_type: abstract
  lang: und

## Creator

- name: Ibrahima Gueye
  role: author
  orcid: https://orcid.org/0000-0001-5296-3894
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Shigenori Ueda
  role: author
  orcid: https://orcid.org/0000-0001-9425-0614
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Atsushi Ogura
  role: author
- name: Takahiro Nagata
  role: author
  orcid: https://orcid.org/0000-0002-8591-2943
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Operando
  schema: not_defined
- subject: HAXPES
  schema: not_defined
- subject: Interfaces
  schema: not_defined
- subject: In2O3
  schema: not_defined
- subject: Al2O3
  schema: not_defined
- subject: Band bending
  schema: not_defined
- subject: Chemical-structures
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in ACS Applied Electronic Materials, copyright © 2024
    American Chemical Society after peer review and technical editing by the publisher.
    To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00049
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-05-15
end_date: 2025-05-15

## Journal

- title: ACS Applied Electronic Materials
  issn: '26376113'
  volume: '6'
  issue: '5'
  start_page: 3237
  end_page: 3248

## Conference



## Related item



## Funding

- identifier: 20H02188
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: ad8fa049-392e-4689-8f0e-f588d2492ca0
  filename: NIMS_MDR.pdf
  content_type: application/pdf
  size: 1507214
  md5: fcab991e723171567e16fd13da7e7475

## Thumbnail

fileset_id: ad8fa049-392e-4689-8f0e-f588d2492ca0
filename: NIMS_MDR.pdf