# Controlling Umklapp Scattering in a Bilayer Graphene Moiré Superlattice

https://mdr.nims.go.jp/datasets/dad6d437-73bf-4a8d-953a-a33db26eb66f

## File

- [2024A00241G_Main-Controlling Umklapp Scattering in a Bilayer Graphene Moire Superlattice.pdf](https://mdr.nims.go.jp/filesets/d86c4b4b-0fa6-4f7e-8b9b-647765b590dc/download) ([Detail](https://mdr.nims.go.jp/filesets/d86c4b4b-0fa6-4f7e-8b9b-647765b590dc.md))
- [2024A00241G_SM-Controlling Umklapp Scattering in a Bilayer Graphene Moire Superlattice.pdf](https://mdr.nims.go.jp/filesets/229171cc-d02a-4f12-abb2-9c44c3d0ae3f/download) ([Detail](https://mdr.nims.go.jp/filesets/229171cc-d02a-4f12-abb2-9c44c3d0ae3f.md))

## Id

dad6d437-73bf-4a8d-953a-a33db26eb66f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-07-23T04:44:59.508819Z

## Updated at

2025-07-23T23:30:18.293003Z

## Published at

2025-07-23T23:18:23.026199Z

## Doi



## First published url

https://doi.org/10.1021/acs.nanolett.3c04223

## Date published

2024-02-21

## Recorded date published

2024-2-21

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Controlling Umklapp Scattering in a Bilayer Graphene Moiré Superlattice
  title_type: original
  lang: en

## Description

- description: We present experimental findings on electron-electron scattering in
    two-dimensional moiré heterostructures with tunable Fermi wave vector, reciprocal
    lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures
    of bilayer graphene (BLG) and hBN. Around half-filling, the primary contribution
    to the resistance of these devices arises from electron-electron Umklapp (Uee)
    scattering, making the resistance of graphene/hBN moiré devices significantly
    larger than that of non-aligned devices (where Uee is forbidden). We find that
    the strength of Uee scattering follows a universal scaling with Fermi energy and
    has a non-monotonic dependence on superlattice period. The Uee scattering is electric
    field tunable and is affected by layer-polarization of BLG. It has a strong particle-hole
    asymmetry – the resistance when the chemical potential is in the conduction band
    is significantly lesser than when it is in the valence band, making the electron-doped
    regime more practical for potential applications.
  description_type: abstract
  lang: en

## Creator

- name: Mohit Kumar Jat
  role: author
- name: Shubhankar Mishra
  role: author
- name: Harsimran Kaur Mann
  role: author
- name: Robin Bajaj
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: H. R. Krishnamurthy
  role: author
- name: Manish Jain
  role: author
- name: Aveek Bid
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: Umklapp scattering
  schema: not_defined
- subject: Brown-Zak oscillations
  schema: not_defined
- subject: Bilayer graphene
  schema: not_defined
- subject: Moiré superlattice
  schema: not_defined
- subject: Layer polarization
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in Nano Letters, copyright © 2024 American Chemical
    Society after peer review and technical editing by the publisher. To access the
    final edited and published work see https://doi.org/10.1021/acs.nanolett.3c04223.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-02-12
end_date: 2025-02-12

## Journal

- title: Nano Letters
  issn: '15306984'
  volume: '24'
  issue: '7'
  start_page: 2203
  end_page: 2209

## Conference



## Related item



## Funding

- funder_name: Ministry of Education, India
- identifier: FA5209 22P0166
  funder_name: DEVCOM Army Research Laboratory
- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- funder_name: Science and Engineering Research Board
- identifier: DST/SJF/PSA-01/2016-17
  funder_name: Department of Science and Technology, Ministry of Science and Technology,
    India
- identifier: SB/DF/005/2017
  funder_name: Department of Science and Technology, Ministry of Science and Technology,
    India
- identifier: DST/NSM/R&D_HPC Applications/2021/23
  funder_name: Department of Science and Technology, Ministry of Science and Technology,
    India
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: d86c4b4b-0fa6-4f7e-8b9b-647765b590dc
  filename: 2024A00241G_Main-Controlling Umklapp Scattering in a Bilayer Graphene
    Moire Superlattice.pdf
  content_type: application/pdf
  size: 3122332
  md5: 2d24de82e875d08c9f3ed0ba167d76bb
- id: 229171cc-d02a-4f12-abb2-9c44c3d0ae3f
  filename: 2024A00241G_SM-Controlling Umklapp Scattering in a Bilayer Graphene Moire
    Superlattice.pdf
  content_type: application/pdf
  size: 10261893
  md5: b7efa5a9894c6b5e107d5e437d4f1530

## Thumbnail

fileset_id: d86c4b4b-0fa6-4f7e-8b9b-647765b590dc
filename: 2024A00241G_Main-Controlling Umklapp Scattering in a Bilayer Graphene Moire
  Superlattice.pdf