# All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality

https://mdr.nims.go.jp/datasets/dad2fa0a-3206-43d4-8d93-ebef213e81e8

## File

- [2012.01146v1(ACS2020).pdf](https://mdr.nims.go.jp/filesets/4d693d44-bf19-463f-9942-9e12876e182c/download) ([Detail](https://mdr.nims.go.jp/filesets/4d693d44-bf19-463f-9942-9e12876e182c.md))

## Id

dad2fa0a-3206-43d4-8d93-ebef213e81e8

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2024-12-08T19:46:37.079956Z

## Updated at

2024-12-10T07:56:20.567823Z

## Published at

2024-12-10T07:56:20.635230Z

## Doi

https://doi.org/10.48505/nims.5130

## First published url

https://doi.org/10.1021/acsami.0c13233

## Date published

2020-11-18

## Recorded date published

2020-11-18

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: 'All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment
    and Heterointerface Quality'
  title_type: original
  lang: en

## Description

- description: Van der Waals heterostructure is the ideal material platform in the
    tunnel field effect transistors (TFET), because the band-to-band tunneling (BTBT)
    dominant current at the room temperature (RT) can be feasible due to the ideally
    dangling bond free heterointerface. However, the subthreshold swing (SS) lower
    than 60 mV/dec of the Boltzmann limit is still challenging. In this work, we systematically
    study the band alignment and heterointerface quality in the n-MoS2 channel heterostructure
    TFET. By selecting the p+-MoS2 source with the sufficiently high doping level,
    the stable gate modulation to type III band alignment was achieved regardless
    of the number of the MoS2 channel layers. For the gate stack formation, it is
    revealed that the top gate deposition of Al2O3 introduces the defect states for
    generation current at the reverse bias while the integration of h-BN top gate
    provides the defect-free clean interface, resulting in the BTBT dominant current
    even at RT. All 2D heterostructure TFET produced by combing the type III n-MoS2/p+-MoS2
    heterostructure with h-BN top gate insulator, SS < 60 mV/dec was achieved at RT.
  description_type: abstract
  lang: und

## Creator

- name: Keigo Nakamura
  role: author
- name: Naoka Nagamura
  role: author
  orcid: https://orcid.org/0000-0002-7697-8983
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Keiji Ueno
  role: author
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Kosuke Nagashio
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: All 2D heterostructure devices
  schema: not_defined
- subject: Band to band tunneling
  schema: not_defined
- subject: Negative differential resistance
  schema: not_defined
- subject: Subthreshold swing
  schema: not_defined
- subject: Type III band alignment
  schema: not_defined

## Rights

- description: 'This document is the Accepted Manuscript version of a Published Work
    that appeared in final form in All 2D Heterostructure Tunnel Field-Effect Transistors:
    Impact of Band Alignment and Heterointerface Quality, copyright © 2020 American
    Chemical Society after peer review and technical editing by the publisher. To
    access the final edited and published work see https://doi.org/10.1021/acsami.0c13233'
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ACS Applied Materials & Interfaces
  issn: '19448252'
  volume: '12'
  issue: '46'
  start_page: 51598
  end_page: 51606

## Conference



## Related item



## Funding

- identifier: JPMXP0112101001
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMJCR15F3
  funder_name: Core Research for Evolutional Science and Technology
- identifier: JPMJPR17NB
  funder_name: Precursory Research for Embryonic Science and Technology
- funder_name: Canon Foundation for Scientific Research
- identifier: 18H03864
  funder_name: Japan Society for the Promotion of Science
- identifier: 19H02561
  funder_name: Japan Society for the Promotion of Science
- identifier: 19K21956
  funder_name: Japan Society for the Promotion of Science
- identifier: JP19H00755
  funder_name: Japan Society for the Promotion of Science
- identifier: JP20H00354
  funder_name: Japan Society for the Promotion of Science
- funder_name: Samco Science and Technology Foundation

## Instrument



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## Fileset

- id: 4d693d44-bf19-463f-9942-9e12876e182c
  filename: 2012.01146v1(ACS2020).pdf
  content_type: application/pdf
  size: 2110635
  md5: 6f3cc0e85c1eeb7a13d63343fe49c787

## Thumbnail

fileset_id: 4d693d44-bf19-463f-9942-9e12876e182c
filename: 2012.01146v1(ACS2020).pdf