Lujun Wang
;
Sotirios Papadopoulos
;
Fadil Iyikanat
;
Jian Zhang
;
Jing Huang
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Michel Calame
;
Mickael L. Perrin
;
F. Javier García de Abajo
;
Lukas Novotny
説明:
(abstract)The control of elastic and inelastic electron tunneling relies on materials with well defined interfaces. Van der Waals materials made of two-dimensional constituents form an ideal platform for such studies. Signatures of acoustic phonons and defect states have been observed in current-to-voltage (I–V ) measurements. These features can be explained by direct electron-phonon or electron-defect interactions. Here we demonstrate a novel two-step tunneling process, involving both phonons and excitons. We use tunnel junctions consisting of graphene and gold electrodes separated by hexagonal boron nitride (hBN) barriers with adjacent transition metal dichalcogenide (TMD) monolayers and observe prominent resonant features in I–V measurements. These resonances appear at bias voltages that correspond to TMD exciton energies and are accompanied by excitonic light emission. By placing the TMD outside of the tunneling pathway we demonstrate that this phonon-exciton mediated tunneling process does not require any charge injection into the TMD. This work demonstrates the appearance of optical modes in electrical transport measurements and introduces a new functionality for optoelectronic devices based on van der Waals materials.
権利情報:
キーワード: Elastic and inelastic electron tunnelling, van der Waals materials, tunnelling process
刊行年月日: 2023-06-26
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1038/s41563-023-01556-7
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その他の識別子:
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更新時刻: 2025-02-28 08:30:51 +0900
MDRでの公開時刻: 2025-02-28 08:30:51 +0900
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s41563-023-01556-7.pdf
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サイズ | 2.21MB | 詳細 |