Anna M. Seiler
;
Nils Jacobsen
;
Martin Statz
;
Noelia Fernandez
;
Francesca Falorsi
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Zhiyu Dong
;
Leonid S. Levitov
;
R. Thomas Weitz
説明:
(abstract)Controlling the bandstructure of Dirac materials is of wide interest in current research but has remained an outstanding challenge for systems such as monolayer graphene. In contrast, Bernal bilayer graphene (BLG) offers a highly flexible platform for tuning the bandstructure. One direction is opening the bandgap by a transverse displacement field, a property which is well established and widely used. Another appealing direction is accessing the complex BLG bands consisting of mini Dirac cones with opposite chiralities occurring at low displacement field near charge neutrality, and tuning them through topological transitions and van Hove singularities. Even though BLG was extensively studied experimentally in the last two decades, the evidence of this exotic, linear bandstructure is still elusive, likely due to insufficient energy resolution. Here, rather than probing the bandstructure using spectroscopy, we use Landau levels as markers of the energy dispersion and carefully analyze the Landau level spectrum in a regime where the cyclotron orbits of electrons or holes in momentum space are small enough to resolve the distinct mini Dirac cones. We identify the presence of four distinct Dirac cones and map out complex topological transitions induced by electric displacement field. These findings introduce a valuable addition to the toolkit for graphene electronics.
権利情報:
キーワード: ernal bilayer graphene, band structure, Landau levels
刊行年月日: 2024-04-11
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1038/s41467-024-47342-0
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-27 12:30:23 +0900
MDRでの公開時刻: 2025-02-27 12:30:23 +0900
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