# p-Type Thermoelectricity of CrN Thin Films by Mg Doping

https://mdr.nims.go.jp/datasets/da230187-546d-48e0-813c-1e0c2427f4fc

## File

- [aizawa-et-al-2025-p-type-thermoelectricity-of-crn-thin-films-by-mg-doping.pdf](https://mdr.nims.go.jp/filesets/74b5b229-bbcb-40fe-b71d-5aa901f4406e/download) ([Detail](https://mdr.nims.go.jp/filesets/74b5b229-bbcb-40fe-b71d-5aa901f4406e.md))

## Id

da230187-546d-48e0-813c-1e0c2427f4fc

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-09-24T01:20:14.975576Z

## Updated at

2025-09-24T03:30:39.368259Z

## Published at

2025-09-24T03:18:54.849428Z

## Doi



## First published url

https://doi.org/10.1021/acsaem.5c01663

## Date published

2025-09-22

## Recorded date published

2025-9-22

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: p-Type Thermoelectricity of CrN Thin Films by Mg Doping
  title_type: original
  lang: en

## Description

- description: Chromium nitride (CrN) thin films have recently attracted widespread
    attention as a promising high performance thermoelectric material due to its high
    power factor. Several studies have been reported on the alloying or doping of
    CrN thin film to control and enhance the thermoelectric properties. Most fabricated
    CrN thin films that have been reported, have shown to be n-type charge carriers.
    Current studies have shown that through nitrogen deficiency and alloying with
    V or W will enhance the n-type behavior and increase the power factor. Although
    V has less valence electrons than Cr, it has been shown not to change the carrier
    polarity. Our measurements found that the Mg doped CrN thin films deposited using
    the reactive magnetron sputtering method change the polarity to p-type charge
    carriers, which is also supported by our calculations. The maximum observed power
    factors of the fabricated∼8 % Mg-alloyed CrN thin-film samples ranged from 0.6
    mW·m−1·K−2 at the room temperature to 0.9 mW·m−1·K−2 at about 550 K.
  description_type: abstract
  lang: und

## Creator

- name: Takashi Aizawa
  role: author
  orcid: https://orcid.org/0000-0003-2357-5336
- name: Frank F. Yun
  role: author
- name: Takao Mori
  role: author
  orcid: https://orcid.org/0000-0003-2682-1846

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: CrN
  schema: not_defined
- subject: thin film
  schema: not_defined
- subject: thermoelectric
  schema: not_defined
- subject: sputtering
  schema: not_defined
- subject: doping
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ACS Applied Energy Materials
  issn: '25740962'
  volume: '8'
  issue: '18'
  start_page: 13360
  end_page: 13366

## Conference



## Related item



## Funding

- identifier: JPMJM19A1
  funder_name: JST-Mirai Program
- identifier: JPMXP1224NM5121
  funder_name: Ministry of Education, Culture, Sports, Science and Technology
- identifier: JPMXP1225NM5136
  funder_name: Ministry of Education, Culture, Sports, Science and Technology

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



## Software



## Custom property



## Fileset

- id: 74b5b229-bbcb-40fe-b71d-5aa901f4406e
  filename: aizawa-et-al-2025-p-type-thermoelectricity-of-crn-thin-films-by-mg-doping.pdf
  content_type: application/pdf
  size: 5408658
  md5: b32cd7712751d16163904cf3e1b7e796

## Thumbnail

fileset_id: 74b5b229-bbcb-40fe-b71d-5aa901f4406e
filename: aizawa-et-al-2025-p-type-thermoelectricity-of-crn-thin-films-by-mg-doping.pdf