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説明:

Chromium nitride (CrN) thin films have recently attracted widespread attention as a promising high performance thermoelectric material due to its high power factor. Several studies have been reported on the alloying or doping of CrN thin film to control and enhance the thermoelectric properties. Most fabricated CrN thin films that have been reported, have shown to be n-type charge carriers. Current studies have shown that through nitrogen deficiency and alloying with V or W will enhance the n-type behavior and increase the power factor. Although V has less valence electrons than Cr, it has been shown not to change the carrier polarity. Our measurements found that the Mg doped CrN thin films deposited using the reactive magnetron sputtering method change the polarity to p-type charge carriers, which is also supported by our calculations. The maximum observed power factors of the fabricated∼8 % Mg-alloyed CrN thin-film samples ranged from 0.6 mW·m−1·K−2 at the room temperature to 0.9 mW·m−1·K−2 at about 550 K.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: CrN, thin film, thermoelectric, sputtering, doping

刊行年月日: 2025-09-22

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Energy Materials (ISSN: 25740962) vol. 8 issue. 18 p. 13360-13366

研究助成金:

• JST-Mirai Program JPMJM19A1
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1224NM5121
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1225NM5136

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsaem.5c01663

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更新時刻: 2025-09-24 12:30:39 +0900

MDRでの公開時刻: 2025-09-24 12:18:54 +0900