High-lying valley-polarized trions in 2D semiconductors

Kai-Qiang Lin; Jonas D. Ziegler; Marina A. Semina; Javid V. Mamedov; Kenji Watanabe; Takashi Taniguchi; Sebastian Bange; Alexey Chernikov; Mikhail M. Glazov; John M. Lupton

doi:10.1038/s41467-022-33939-w

ジャーナル論文 High-lying valley-polarized trions in 2D semiconductors

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Kai-Qiang Lin, Jonas D. Ziegler, Marina A. Semina, Javid V. Mamedov, Kenji Watanabe, Takashi Taniguchi, Sebastian Bange, Alexey Chernikov, Mikhail M. Glazov, John M. Lupton. High-lying valley-polarized trions in 2D semiconductors. Nature Communications. 2022, 13 (1), 6980. https://doi.org/10.1038/s41467-022-33939-w

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(abstract)

Optoelectronic functionalities of monolayer transition-metal dichalcogenide (TMDC) semiconductors are characterized by the emergence of externally tunable, correlated many-body complexes arising from strong Coulomb interactions. However, the vast majority of such states susceptible to manipulation has been limited to the region in energy around the fundamental bandgap. We report the observation of tightly bound, valley-polarized high-lying trions in monolayer TMDC transistors: quasiparticles composed of an electron from a high-lying conduction band with negative effective mass, a hole from the first valence band, and an additional charge from a band-edge state. Signatures of the associated p-like high-lying trion are identified from the excitonic quantum interference in second-harmonic generation. An electrical gate controls both the oscillator strength and the detuning of the excitonic transitions and therefore the Rabi frequency of the strongly driven three-level system, enabling excitonic quantum interference to be switched on and off in a deterministic fashion.

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