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We focus on the electrical and optical properties of monolayer MoTe2 (1L-MoTe2) flakes fabricated by gold-mediated exfoliation and show that this technique is applicable to the development of 1L-MoTe2 channel FETs. It is found that the average area of gold-exfoliated flakes is larger than that of conventional tape exfoliation. While the samples without a hBN cap layer are easily oxidized by atmospheric exposure for 1 day, increasing in the non-radiative recombination centers, the surface oxidation of the 1L-MoTe2 can be suppressed by the deposition of the hBN cap layer. For the 1L-MoTe2 channel FETs, the transfer characteristics show clear ambipolar behavior and excellent switching properties with an on/off ratio of 105 in the n-type regime. We show that the graphite/1L-MoTe2 junctions form the Schottky barrier with the energy of 280 meV, which is in good agreement with the theoretical value, suggesting the formation of an ideal 2D contact consisting of an abrupt interface. The gate voltage at the conductivity minimum point shifts to the negative value by decreasing the vacuum level, demonstrating that the electrical properties of the gold-exfoliated 1L-MoTe2 strongly depend on the environmental conditions.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: MoTe2 monolayers, gold-mediated exfoliation
, hBN capping

刊行年月日: 2024-11-21

出版者: Wiley

掲載誌:

• physica status solidi (b) (ISSN: 03701972) vol. 262 issue. 4 2400374

研究助成金:

• Japan Society for the Promotion of Science JP21K04812
• Japan Society for the Promotion of Science JP24K08206
• Japan Society for the Promotion of Science 20H00354
• Japan Society for the Promotion of Science 23H02052

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/pssb.202400374

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更新時刻: 2026-02-17 08:30:42 +0900

MDRでの公開時刻: 2026-02-16 18:00:52 +0900