# Silicon–van der Waals heterointegration for CMOS-compatible logic-in-memory design

https://mdr.nims.go.jp/datasets/d7722aba-0cc0-4ff0-8e3f-663166ecbc3f

## File

- [Lee et al., 2023, Silicon – van der Waals heterointegration for CMOS- compatible logic-in-memory design.pdf](https://mdr.nims.go.jp/filesets/1cbe6b55-a3a9-4eb9-9829-b22a4e05313b/download) ([Detail](https://mdr.nims.go.jp/filesets/1cbe6b55-a3a9-4eb9-9829-b22a4e05313b.md))

## Id

d7722aba-0cc0-4ff0-8e3f-663166ecbc3f

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-02-09T23:09:42.407389Z

## Updated at

2025-02-10T07:30:24.707135Z

## Published at

2025-02-10T07:30:24.850793Z

## Doi



## First published url

https://doi.org/10.1126/sciadv.adk1597

## Date published

2023-12-08

## Recorded date published

2023-12-8

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Silicon–van der Waals heterointegration for CMOS-compatible logic-in-memory
    design
  title_type: original
  lang: en

## Description

- description: 'The intensive data-centered  computational requirement leads  to the
    development of a  computing-in-memory  architecture  that  can  blur  the  boundary  between  memory  and  process  units.  However,  the  implementation  of  silicon  CMOS-based  computing-in-
    memory  faces  challenges  in  complicated  circuit  design  and  static  power  dissipation,  especially
    in a digital manner, i.e., logic-in-memory, which requires both nonvolatility
    and  reconfigurability. Here, we report a universal design of nonvolatile reconfigurable
    devices  featuring  a  2D/3D  heterointegrated  configuration.  By  exploiting  the  photo-controlled  charge
    trapping/detrapping process and the partially top-gated energy band landscape,  the  van  der  Waals  heterostacking  achieves  polarity  storage  and  logic  reconfigurable  characteristics,  respectively.  Two  critical  merits  jointly  enable  desirable  performance,  including  precise  polarity  tunability,  logic  nonvolatility,  robustness  against  high  temperature  (at  85  °C),  and  near-ideal  subthreshold  swing  (80  mV
    dec1 ).  A  comprehensive  investigation  of  dynamic  charge  fluctuations  offers  a  holistic  understanding
    of the nonvolatile reconfigurability origins (a trap level of 10E13 cm2 eV1 ).
    We further cascade such nonvolatile reconfigurable units into a monolithic circuit
    layer  to demonstrate logic-in-memory computing possibilities, such as a high-gain
    (65 at V dd =  0.5  V)  logic  inverter  and  logic  gates.  Our  devices  with  simplified  circuit  design  and  manufacturing  provide  an  innovative  3D  heterointegration  prototype  for  future  computing-in-memory
    hardware. '
  description_type: abstract
  lang: und

## Creator

- name: Mu-Pai Lee
  role: author
- name: Caifang Gao
  role: author
- name: Meng-Yu Tsai
  role: author
- name: Che-Yi Lin
  role: author
- name: Feng-Shou Yang
  role: author
- name: Hsin-Ya Sung
  role: author
- name: Chi Zhang
  role: author
- name: Wenwu Li
  role: author
- name: Jun Li
  role: author
- name: Jianhua Zhang
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Keiji Ueno
  role: author
- name: Kazuhito Tsukagoshi
  role: author
  orcid: https://orcid.org/0000-0001-9710-2692
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Ching-Hwa Ho
  role: author
- name: Junhao Chu
  role: author
- name: Po-Wen Chiu
  role: author
- name: Mengjiao Li
  role: author
- name: Wen-Wei Wu
  role: author
- name: Yen-Fu Lin
  role: author

## Contact agent



## Publisher

organization: American Association for the Advancement of Science (AAAS)

## Managing organization



## Keyword

- subject: van der Waals
  schema: not_defined
- subject: 2D/3D heterointegration
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: Science Advances
  issn: '23752548'
  volume: '49'
  issue: '9'
  article_number: adk1597

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## Fileset

- id: 1cbe6b55-a3a9-4eb9-9829-b22a4e05313b
  filename: Lee et al., 2023, Silicon – van der Waals heterointegration for CMOS-
    compatible logic-in-memory design.pdf
  content_type: application/pdf
  size: 1299474
  md5: e929dd536dde792cd7e88d149b8a978a

## Thumbnail

fileset_id: 1cbe6b55-a3a9-4eb9-9829-b22a4e05313b
filename: Lee et al., 2023, Silicon – van der Waals heterointegration for CMOS- compatible
  logic-in-memory design.pdf