# Structural and Electric Characterization of Sputtered Pt/WSe<sub>2</sub> Contacts toward High-Performance 2D p-FETs

https://mdr.nims.go.jp/datasets/d76d31a6-d038-448e-b0fc-b15a929f6d20

## File

- [2025-ACSomega-Nakajima-structural-and-electric-characterization-of-sputtered-pt-wse2-contacts-toward-high-performance-2d-p-fets.pdf](https://mdr.nims.go.jp/filesets/d672e834-a4d4-4c70-8091-e9979a3fc064/download) ([Detail](https://mdr.nims.go.jp/filesets/d672e834-a4d4-4c70-8091-e9979a3fc064.md))

## Id

d76d31a6-d038-448e-b0fc-b15a929f6d20

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-12-09T00:32:20.064246Z

## Updated at

2025-12-09T07:31:02.888823Z

## Published at

2025-12-09T07:26:08.341454Z

## Doi



## First published url

https://doi.org/10.1021/acsomega.5c05764

## Date published

2025-09-23

## Recorded date published

2025-9-23

## Resource type

journal_article

## Manuscript type

vor

## Collection



## Title

- title: Structural and Electric Characterization of Sputtered Pt/WSe<sub>2</sub>
    Contacts toward High-Performance 2D p-FETs
  title_type: original
  lang: en

## Description

- description: For high-performance p-type field-effect transistors (FETs) based on
    two-dimensional (2D) materials, the use of Pt as the contact metal, with its high
    work function, is advantageous for effective hole injection into the 2D channel.
    However, the high-energy sputtering process required to deposit Pt, due to its
    high melting point, often induces significant damage to the 2D materials. Recently,
    the achievement of nearly ideal van der Waals contacts in Sb2Te3/MoS2 via sputtering
    has motivated us to investigate WSe2 p-FETs with sputtered Pt electrodes. Notably,
    reasonable p-FET performance was observed even in monolayer WSe2. However, various
    characterizations revealed that the crystal structure of WSe2 was no longer preserved,
    suggesting the formation of a quasi-edge contact between Pt-sputtered WSe2 and
    the WSe2 channel. Moreover, from the perspective of sputtering applicability,
    the relationship between deposition methods, deposited materials, and the resulting
    extent of damage was systematically examined.
  description_type: abstract
  lang: und

## Creator

- name: Ryuichi Nakajima
  role: author
- name: Tomonori Nishimura
  role: author
  orcid: https://orcid.org/0000-0002-8000-5164
- name: Kaito Kanahashi
  role: author
  orcid: https://orcid.org/0000-0003-2571-3384
- name: Shogo Hatayama
  role: author
  orcid: https://orcid.org/0000-0002-2914-1072
- name: Wen Hsin Chang
  role: author
  orcid: https://orcid.org/0000-0002-8501-6276
- name: Yuta Saito
  role: author
  orcid: https://orcid.org/0000-0002-9576-1560
- name: Toshifumi Irisawa
  role: author
- name: Keiji Ueno
  role: author
- name: Yasumitsu Miyata
  role: author
  orcid: https://orcid.org/0000-0002-9733-5119
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
- name: Kosuke Nagashio
  role: author
  orcid: https://orcid.org/0000-0003-1181-8644

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: WSe2 Contact FET
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: ACS Omega
  issn: '24701343'
  volume: '10'
  issue: '37'
  start_page: 42973
  end_page: 42979

## Conference



## Related item



## Funding

- identifier: JPMJMI22708192
  funder_name: JST-Mirai Program
- identifier: JPMJCR23A4
  funder_name: Core Research for Evolutional Science and Technology
- identifier: JPMJCR24A3
  funder_name: Core Research for Evolutional Science and Technology
- identifier: JPMJCR24A5
  funder_name: Core Research for Evolutional Science and Technology
- identifier: JP21H05232
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H05445
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22K04212
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23K02052
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23K23243
  funder_name: Japan Society for the Promotion of Science
- identifier: JP23K26745
  funder_name: Japan Society for the Promotion of Science
- identifier: JP24K08195
  funder_name: Japan Society for the Promotion of Science
- identifier: JPMJFR213X
  funder_name: Fusion Oriented REsearch for disruptive Science and Technology
- identifier: '05901'
  funder_name: National Institute of Information and Communications Technology
- funder_name: World Premier International Research Center Initiative, Ministry of
    Education, Culture, Sports, Science and Technology
- identifier: JP21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21H05236
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21H05237
  funder_name: Japan Society for the Promotion of Science
- identifier: JP21K04826
  funder_name: Japan Society for the Promotion of Science
- identifier: JP22H04957
  funder_name: Japan Society for the Promotion of Science

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## Fileset

- id: d672e834-a4d4-4c70-8091-e9979a3fc064
  filename: 2025-ACSomega-Nakajima-structural-and-electric-characterization-of-sputtered-pt-wse2-contacts-toward-high-performance-2d-p-fets.pdf
  content_type: application/pdf
  size: 2708553
  md5: 68f161f7751c33dcfc15e592ffb48bd7

## Thumbnail

fileset_id: d672e834-a4d4-4c70-8091-e9979a3fc064
filename: 2025-ACSomega-Nakajima-structural-and-electric-characterization-of-sputtered-pt-wse2-contacts-toward-high-performance-2d-p-fets.pdf