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説明:

For high-performance p-type field-effect transistors (FETs) based on two-dimensional (2D) materials, the use of Pt as the contact metal, with its high work function, is advantageous for effective hole injection into the 2D channel. However, the high-energy sputtering process required to deposit Pt, due to its high melting point, often induces significant damage to the 2D materials. Recently, the achievement of nearly ideal van der Waals contacts in Sb2Te3/MoS2 via sputtering has motivated us to investigate WSe2 p-FETs with sputtered Pt electrodes. Notably, reasonable p-FET performance was observed even in monolayer WSe2. However, various characterizations revealed that the crystal structure of WSe2 was no longer preserved, suggesting the formation of a quasi-edge contact between Pt-sputtered WSe2 and the WSe2 channel. Moreover, from the perspective of sputtering applicability, the relationship between deposition methods, deposited materials, and the resulting extent of damage was systematically examined.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: WSe2 Contact FET

刊行年月日: 2025-09-23

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Omega (ISSN: 24701343) vol. 10 issue. 37 p. 42973-42979

研究助成金:

• JST-Mirai Program JPMJMI22708192
• Core Research for Evolutional Science and Technology JPMJCR23A4
• Core Research for Evolutional Science and Technology JPMJCR24A3
• Core Research for Evolutional Science and Technology JPMJCR24A5
• Japan Society for the Promotion of Science JP21H05232
• Japan Society for the Promotion of Science JP22H05445
• Japan Society for the Promotion of Science JP22K04212
• Japan Society for the Promotion of Science JP23K02052
• Japan Society for the Promotion of Science JP23K23243
• Japan Society for the Promotion of Science JP23K26745
• Japan Society for the Promotion of Science JP24K08195
• Fusion Oriented REsearch for disruptive Science and Technology JPMJFR213X
• National Institute of Information and Communications Technology 05901
• World Premier International Research Center Initiative, Ministry of Education, Culture, Sports, Science and Technology
• Japan Society for the Promotion of Science JP21H05233
• Japan Society for the Promotion of Science JP21H05236
• Japan Society for the Promotion of Science JP21H05237
• Japan Society for the Promotion of Science JP21K04826
• Japan Society for the Promotion of Science JP22H04957

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsomega.5c05764

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更新時刻: 2025-12-09 16:31:02 +0900

MDRでの公開時刻: 2025-12-09 16:26:08 +0900