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説明:

Diffusion processes govern fundamental phenomena such as phase transformations, doping, and intercalation in van der Waals (vdW) bonded materials. Here, we quantify the diffusion dynamics of W atoms by visualizing the motion of individual atoms at three different vdW interfaces, BN/vacuum, BN/BN, and BN/WS2, using scanning transmission electron microscopy movies. Supported by density functional theory calculations, we infer that in all cases diffusion is governed by intermittent trapping at electron beam-generated defect sites. This leads to diffusion properties that depend strongly on the number of defects. These results suggest that diffusion and intercalation processes in vdW materials are highly tunable and sensitive to crystal quality. Furthermore, the demonstration of atomic resolution imaging of materials inside vdW heterostructures offers possibilities for direct visualization of diffusion and atomic interactions, as well as for experiments exploring atomic structures, their in-situ modification, and electrical property measurement.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Defect-Controlled atomic Diffusion, van der Waals (vdW) gaps, scanning transmission electron microscopy

刊行年月日: 2024-08-04

出版者: Wiley

掲載誌:

• Advanced Materials (ISSN: 09359648) vol. 36 issue. 39 2403989

研究助成金:

• Basic Energy Sciences FWP ERKCK47
• Army Research Office W911NF‐18‐1‐0431
• Gordon and Betty Moore Foundation GBMF8048

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1002/adma.202403989

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更新時刻: 2026-02-14 22:51:07 +0900

MDRでの公開時刻: 2026-02-10 18:03:06 +0900