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説明:

We perform transport measurements on proximitized, ballistic, bilayer graphene Josephson junctions (BGJJs) in the intermediate-to-long junction regime (L > ξ). We measure the device’s differential resistance as a function of bias current and gate voltage for a range of different temperatures. The extracted critical current IC follows an exponential trend with temperature: exp(−kBT/δE). Here δE = h ̄νF /2πL: an expected trend for intermediate-to-long junctions. From δE, we determine the Fermi velocity of the bilayer graphene, which is found to increase with gate voltage. Simultaneously, we show the carrier density dependence of δE, which is attributed to the quadratic dispersion of bilayer graphene. This is in contrast to single layer graphene Josephson junctions, where δE and the Fermi velocity are independent of the carrier density. The carrier density dependence in BGJJs allows for additional tuning parameters in graphene-based Josephson Junction devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: bilayer graphene Josephson junctions (BGJJs)
, critical current
, Fermi velocity

刊行年月日: 2025-04-16

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Nanoscience Au (ISSN: 26942496) vol. 5 issue. 2 p. 65-69

研究助成金:

• National Science Foundation DMR-2005092

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1021/acsnanoscienceau.4c00080

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更新時刻: 2026-02-18 08:30:14 +0900

MDRでの公開時刻: 2026-02-17 17:57:19 +0900