# Elucidating the improved properties of defect engineered lanthanum-doped nickel oxide as hole-transport layer in triple-cation perovskite solar cells

https://mdr.nims.go.jp/datasets/d53cbb19-d9ad-442b-afc7-e81e0dda0a32

## File

- [La NiO Solar Energy_Vishnuvardhan Reddy.docx](https://mdr.nims.go.jp/filesets/7b4dacdc-2f3e-4616-9452-cb720390f1f7/download) ([Detail](https://mdr.nims.go.jp/filesets/7b4dacdc-2f3e-4616-9452-cb720390f1f7.md))

## Id

d53cbb19-d9ad-442b-afc7-e81e0dda0a32

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-01-09T09:36:34.758971Z

## Updated at

2026-08-28T23:30:04.509993Z

## Published at

2026-08-28T23:25:09.357586Z

## Doi

https://doi.org/10.48505/nims.5262

## First published url

https://doi.org/10.1016/j.solener.2024.112888

## Date published

2024-08-29

## Recorded date published

2024-10

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Elucidating the improved properties of defect engineered lanthanum-doped
    nickel oxide as hole-transport layer in triple-cation perovskite solar cells
  title_type: original
  lang: en

## Description

- description: 'Charge recombination at the interface between the hole transport layer
    (HTL) and perovskite (PVK) has been a performance bottleneck for perovskite solar
    cells (PSCs). We present a detailed examination for the solar cell efficiency
    of the device using lanthanum (La)-doped nickel oxide (NiOx) as an HTL. The NiOx
    and La-doped NiOx films were prepared using the spray pyrolysis process. We employed
    low-temperature photoluminescence (LT-PL) to estimate the defect activation energy
    and utilized SCAPS 1D software to simulate the interface defect density. According
    to the data obtained, the interface between La: NiOx and PVK shows a lower activation
    energy for defects, indicating that it is more advantageous for charge transfer
    compared to the interface between NiOx and PVK. Utilizing SCAPS simulations the
    experimental JV curves closely match the simulated JV curves obtained from SCAPS
    simulations. These simulations were performed using optimal parameters, which
    involved increasing the Rsh values and reducing the interface density in La:NiOx
    based PSCs. The interface defect densities are estimated to be La:NiOx/PVK and
    NiOx/PVK interfaces are 1×1012 cm-2 and 1.7×1012 cm-2, respectively. This indicates
    ≈ 70 % reduction in defect density at the La:NiOx/PVK interface compared to the
    NiOx/PVK interface. The conductivity values obtained from linear sweep voltammetry
    (LSV) are 1.01×10-3 S cm-1 for NiOx films and 1.21×10-3 S cm-1 for La: NiOx films.
    This indicates a significant enhancement of ≈ 20 % in the conductivity of La:
    NiOx films compared to undoped films. This leads to improvements in VOC and ultimately
    enhances the PCE. The calculating defect density at the HTL/PVK interface can
    contribute to the fabrication of futuristic highly efficient PSCs.'
  description_type: abstract
  lang: en

## Creator

- name: Vishnuvardhan Reddy Chappidi
  role: author
- name: Sudhanshu Kumar Nayak
  role: author
- name: Md. Emrul Kayesh
  role: author
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Md. Abdul Karim
  role: author
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Yulu He
  role: author
- name: Ashraful Islam
  role: author
  orcid: https://orcid.org/0000-0002-1633-1432
  organization: National Institute for Materials Science
  ror: https://ror.org/026v1ze26
- name: Sai Santosh Kumar Raavi
  role: author

## Contact agent



## Publisher

organization: Elsevier BV

## Managing organization



## Keyword

- subject: Defect Engineering
  schema: not_defined
- subject: Perovskite Solar Cells
  schema: not_defined
- subject: Lanthanum-Doped Nickel Oxide
  schema: not_defined
- subject: Hole-Transport Layer
  schema: not_defined

## Rights

- identifier: https://creativecommons.org/licenses/by-nc-nd/4.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2024-08-29
end_date: 2026-08-29

## Journal

- title: Solar Energy
  issn: '0038092X'
  volume: '281'
  article_number: '112888'

## Conference



## Related item



## Funding

- funder_name: Department of Science and Technology

## Instrument



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## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



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## Fileset

- id: 7b4dacdc-2f3e-4616-9452-cb720390f1f7
  filename: La NiO Solar Energy_Vishnuvardhan Reddy.docx
  content_type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
  size: 2688468
  md5: 915ef7142be982f1cc9df0dc36346b5a

## Thumbnail

fileset_id: 7b4dacdc-2f3e-4616-9452-cb720390f1f7
filename: La NiO Solar Energy_Vishnuvardhan Reddy.docx