# Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam

https://mdr.nims.go.jp/datasets/d4fd06fe-4749-4171-ae36-5af6504ac291

## File

- [Uedono-et-al_IWJT2025_Proceedings.pdf](https://mdr.nims.go.jp/filesets/2f2cf2d5-738b-4449-84b9-804bf889b01f/download) ([Detail](https://mdr.nims.go.jp/filesets/2f2cf2d5-738b-4449-84b9-804bf889b01f.md))

## Id

d4fd06fe-4749-4171-ae36-5af6504ac291

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2025-09-17T01:15:32.572147Z

## Updated at

2025-09-17T07:30:20.574051Z

## Published at

2025-09-17T07:19:23.795026Z

## Doi

https://doi.org/10.48505/nims.5766

## First published url

https://doi.org/10.23919/iwjt66253.2025.11072893

## Date published

2025-06-04

## Recorded date published

2025-6-4

## Resource type

conference_paper

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using
    a Monoenergetic Positron Beam
  title_type: original
  lang: en

## Description

- description: 'Annealing behaviors of vacancy-type defects in ion-implanted GaN were
    studied by positron annihilation. For as-implanted samples, the major defect species
    was identified as VGa-type defects. For N-implanted GaN, the size of the vacancies
    increased as the annealing temperature increased up to 1100°C and then shrunk
    above 1200°C. This behavior was attributed to recombinations between VN-type defects
    and excess N. For Mg-implanted GaN with N-implantation, the major defect species
    after annealing above 1000°C was vacancy clusters such as (VGaVN)3. Positively
    charged vacancy clusters were formed after annealing above 1000°C, and they have
    more VN than neutral or negatively charged clusters. After annealing at 1400°C,
    the major secondary defects were nano-scale intrinsic defects and collapsed vacancy
    disks forming intrinsic dislocation loops, and the formation of the latter defects
    was suppressed in N-implanted GaN. '
  description_type: abstract
  lang: und

## Creator

- name: Akira Uedono
  role: author
- name: Ryo Tanaka
  role: author
- name: Shinya Takashima
  role: author
- name: Katsunori Ueno
  role: author
- name: Masaharu Edo
  role: author
- name: Kohei Shima
  role: author
- name: Shigefusa F. Chichibu
  role: author
- name: Jun Uzuhashi
  role: author
  orcid: https://orcid.org/0000-0003-2023-8158
- name: Tadakatsu Ohkubo
  role: author
  orcid: https://orcid.org/0000-0003-3548-1951
- name: Shoji Ishibashi
  role: author
- name: Kacper Sierakowski
  role: author
- name: Michal Bockowski
  role: author

## Contact agent



## Publisher

organization: IEEE

## Managing organization



## Keyword

- subject: gallium nitride
  schema: not_defined

## Rights

- description: "© 2025 IEEE.  Personal use of this material is permitted.  Permission
    from IEEE must be obtained for all other uses, in any current or future media,
    including reprinting/republishing this material for advertising or promotional
    purposes, creating new collective works, for resale or redistribution to servers
    or lists, or reuse of any copyrighted component of this work in other works.\r\n"
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo



## Journal

- title: 2025 22nd International Workshop on Junction Technology (IWJT)
  issn: '27682153'
  start_page: 79
  end_page: 82

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## Fileset

- id: 2f2cf2d5-738b-4449-84b9-804bf889b01f
  filename: Uedono-et-al_IWJT2025_Proceedings.pdf
  content_type: application/pdf
  size: 708588
  md5: e056dfb33c64113e29dc5f34964dda66

## Thumbnail

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filename: Uedono-et-al_IWJT2025_Proceedings.pdf