# Anomalous Hysteresis in Graphite/Boron Nitride Transistors

https://mdr.nims.go.jp/datasets/d4df7f81-433f-456b-a513-4d13b32efc00

## File

- [2025A00777G_Graphite_hysteresis_accepted.pdf](https://mdr.nims.go.jp/filesets/165d03a6-bd5c-4986-8aee-2ac568d9fefb/download) ([Detail](https://mdr.nims.go.jp/filesets/165d03a6-bd5c-4986-8aee-2ac568d9fefb.md))

## Id

d4df7f81-433f-456b-a513-4d13b32efc00

## Local identifier



## Visibility

open_to_public

## State

published

## Created at

2026-08-04T23:58:40.205362Z

## Updated at

2026-08-05T01:00:53.688193Z

## Published at

2026-08-05T03:30:57.934656Z

## Doi



## First published url

https://doi.org/10.1021/acs.nanolett.5c01799

## Date published

2025-05-28

## Recorded date published

2025-5-28

## Resource type

journal_article

## Manuscript type

accepted_manuscript

## Collection



## Title

- title: Anomalous Hysteresis in Graphite/Boron Nitride Transistors
  title_type: original
  lang: en

## Description

- description: Field-effect devices constructed from van der Waals (vdW) materials
    with hexagonal boron nitride (hBN) as gate dielectrics usually exhibit negligible
    hysteresis, enabling exquisitely detailed studies of diverse gate-voltage-tuned
    phenomena. Recently, a dramatic hysteresis effect, sometimes called the “gate
    doesn’t work” or “electron ratchet” effect, has been observed sporadically in
    otherwise typical vdW devices. Its lack of reproducibility has hindered clear
    identification of its origin, which has been postulated to rely on the combination
    of bilayer graphene with moiré patterns from rotationally aligned hBN. Here,
    we report observing this effect in devices with thicker graphite channels, associating
    it with a single graphite surface. Remarkably, the hysteresis persists at room
    temperature, without intentional hBN alignment, and even with a WSe2 monolayer
    inserted between the graphite and hBN. Furthermore, it exhibits continuous relaxation
    over long time scales. These observations impose strong constraints on the origin
    of this puzzling phenomenon, which has exciting potential applications if it can
    be mastered.
  description_type: abstract
  lang: en

## Creator

- name: Dacen Waters
  role: author
- name: Derek Waleffe
  role: author
- name: Ellis Thompson
  role: author
- name: Esmeralda Arreguin-Martinez
  role: author
- name: Jordan Fonseca
  role: author
- name: Thomas Poirier
  role: author
- name: James H. Edgar
  role: author
- name: Kenji Watanabe
  role: author
  orcid: https://orcid.org/0000-0003-3701-8119
  organization: National Institute for Materials Science
- name: Takashi Taniguchi
  role: author
  orcid: https://orcid.org/0000-0002-1467-3105
  organization: National Institute for Materials Science
- name: Xiaodong Xu
  role: author
- name: David Cobden
  role: author
- name: Matthew Yankowitz
  role: author

## Contact agent



## Publisher

organization: American Chemical Society (ACS)

## Managing organization



## Keyword

- subject: van der Waals materials
  schema: not_defined
- subject: Hysteresis
  schema: not_defined
- subject: Hexagonal boron nitride (hBN)
  schema: not_defined

## Rights

- description: This document is the Accepted Manuscript version of a Published Article
    that appeared in final form in Nano Letters, copyright © 2025 American Chemical
    Society. To access the final published article, see https://doi.org/10.1021/acs.nanolett.5c01799.
  identifier: http://rightsstatements.org/vocab/InC/1.0/

## Other identifier(s)



## Data origin

- data_origin_type: other

## Embargo

start_date: 2025-05-16
end_date: 2026-05-16

## Journal

- title: Nano Letters
  issn: '15306984'
  volume: '25'
  issue: '21'
  start_page: 8768
  end_page: 8774

## Conference



## Related item



## Funding

- identifier: 23-4683
  funder_name: Idaho National Laboratory
- funder_name: Ministry of Education, Culture, Sports, Science and Technology
- funder_name: Intelligence Community Postdoctoral Research Fellowship Program
- funder_name: Clean Energy Institute
- funder_name: Office of the Director of National Intelligence
- identifier: N00014-22-1-2582
  funder_name: Office of Naval Research
- identifier: 21H05233
  funder_name: Japan Society for the Promotion of Science
- identifier: 23H02052
  funder_name: Japan Society for the Promotion of Science
- funder_name: U.S. Department of Energy
- identifier: '2308979'
  funder_name: National Science Foundation
- identifier: DMR-2041972
  funder_name: National Science Foundation

## Instrument



## Instrument operator



## Instrument managing organization



## Measurement method



## Specimen



## Chemical composition



## Structure for specimen



## Structural feature for specimen



## Specific property for specimen



## Process for specimen treatment



## Computational method



## Energy level/transition state



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## Custom property



## Fileset

- id: 165d03a6-bd5c-4986-8aee-2ac568d9fefb
  filename: 2025A00777G_Graphite_hysteresis_accepted.pdf
  content_type: application/pdf
  size: 17639815
  md5: 5abf91b102cdd8dfd460b5b5830384f4

## Thumbnail

fileset_id: 165d03a6-bd5c-4986-8aee-2ac568d9fefb
filename: 2025A00777G_Graphite_hysteresis_accepted.pdf